MACOM DU2880T Datasheet

an AMP comoanv

RF MOSFET Power Transistor, 8OW, 28V

2 - 175 MHz

Features

N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Competitive Devices

Absolute Maximum Ratings at 25°C

DU2880T

Thermal Resistance

Electrical Characteristics at 25°C

I Parameter

Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source LeakageCurrent
Gate Threshold Voltage V
ForwardTransconductance
InputCapacitance

Output Capacitance C
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance VSWR-T -

1 Symbol 1 Min 1 Max ( Units 1

BVDSS

‘DSS

‘GSS

GSITHI

GM

C

ISS

ass

%s -

GP
%

65 -

4.0 mA

4.0 pA

2.0 6.0 V

2.0 - S
180 pF
160 pF

32

PF

13 - dB

60 -

3O:l -

%

Test Conditions

V,,=O.O V, 1,,=20.0 mA

V

V,,=28.0 V, V,,=O.O V
v,,=20.0 v, v,,=o.o v
V&O.0 V, 1,,=400.0 mA
v,,=lo.o V, 1,,=4.0 A, AV,,=l .O V, 80 us Pulse

V,,=28.0 V, F=l .O MHz
V,,=28.0 V, F=l .O MHz
V,,=28.0 V, F=l .O MHz
V,,=28.0 V, I,,=400 mA, P,,=80.0 W, F=175 MHz
V,,=28.0 V. I,,=400 mA, P,,=80.0 W, F=175 MHz
V,,=28.0 V, I,,=400 mA, P,,,r=80.0 W, F=175 MHz

Specifications Subject to Change Without Notice.

North America:

Tel. (BOO) 366-2266
Fax [phone]

n Asia/Pacific: Tel. [phone]

Fax [phone] Fax [phone]

M/A-COM, inc.

Europe: Tel. [phone]

n

RF MOSFET Power Transistor, 8OW, 28V

Typical Broadband Performance Curves

DU2880T

v2.00

EFFICIENCY vs FREQUENCY

V,,=28 V I,,=400 mA PO,,=80 W

50s

25

50

POWER OUTPUT vs POWER INPUT

120 r

100

s

80

5
e

f$ 60

B

40

3

2

20

0

0.1 0.2 0.3 1 2

100

FREQUENCY (MHz)

V,,=28 V I,,=400 mA

POWER INPUT(W)

150

3 4 5

175

1

GAIN vs FREQUENCY

25 I

10

25 50

V,,=28 V I,,=400 mA P,,,=80 W

100 150 175

FREQUENCY (MHz)

POWER OUTPUT vs SUPPLY VOLTAGE

I

120

loo -

5 80.

13 15 20

I,,=400 mA F=175 MHz P,,=3.0 W

I

25 30 33

SUPPLY VOLTAGE (V)

Specifications Subject !o Change Without Notrce.

M/A-COM, Inc.

North America: Tel. [phone]

Fax [phone]

n Asia/Pacific: Tel. [phone]

Fax [phone]

Europe: Tel. [phone]

D

Fax [phone]

RF MOSFET Power Transistor, 8OW, 28V

Typical Device Impedance

DU2880T

v2.00

Frequency (MHz)

30
50
100
175

Z,, (OHMS)

5.4 - j 4.4

2.5 - j 4.4
l.S-j3.4

0.7 - j 1.2

Z

LOAD (OHMS)

5.7 + j 4.7

3.4 + j 3.5

2.4 + j 2.4

1.7 + j 0.8

V,,=28 V, I,,=400 mA, P,,,.=80 Watts

Z,, is the se+ equivalent input impedance of the device from gate to source.
Z

LOAD is the optimum series equivalent load impedance as measured from drain to ground.

RF Test Fixture

VDS = 2s VOLTS
IW=4oomA

VGS

J3

Cl2

35. IC”

R2

- -

- -

-!

1

VDS

J4

L4

RF IN

Jl

Cl

Cl ,c3
c2.c9,c10
CGl 1
C5
c&c9

C7
Cl2
Ll
L2
W.L4

Rl
I%?

Cl
BOARD

Specifications Subject to Change Without Notice.

North America: Tel. [phone]

Fax [phone]

PARTS LIST

TRIMMER CAPACITOR 4-4opF
CAPACITOR 5@F
CAPACITOR 10oD~F
MONOLITHIC CIRCUIT CAPACITOR 0.01 UF
TRIMMER CAPACITOR S-~BOPF
CAPACITOR 15pF
ELECTROLYTIC CAPACITOR 5&F 50 VOLT
NO. 12 AWG COPPER WIRE X 1.18’ (LOOP 0.5’)
NO, 12 AWG COPPER WIRE X 1’ (LOOP 0.4’)
8 TURNS OF NO. 18 AWG ENAMEL WIRE ON
Y).25-. CLOSE WOUND
RESISTOR 300 OHMS 0.5 WATT

RESISTOR 27K OHMS 0.25 WAlT
DU2BBOT
FR4 o.os2

m Asia/Pacific: Tel. [phone]

Fax [phone]

RF OUT

WA-COM, Inc.

Europe: Tel. [phone]

n

Fax [phone]