MACOM DU2860U Datasheet

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RF MOSFET Power Transistor, 6OW, 28V

2 - 175 MHz

Features

N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Bipolar Devices

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Absolute Maximum Ratings at 25°C

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DU2860U

v2.00

4Gl.

Electrical Characteristics at 25°C

IWA-COM, Inc.

North America:

Specifications Subject to Change Without Notice.

Tel. [phone]
Fax [phone] Fax [phone] Fax +I4 (1344) 300 020

n Asia/Pacific: Tel. [phone]

Europe: Tel. [phone]

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RF MOSFET Power Transistor, 6OW, 28V

Typical Broadband Performance Curves

v2.00

GAIN vs FREQUENCY

V,,=28 V 1,0=300 mA P,,,.,.=60 W

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I”

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50 100

FREQUENCY (MHz)

150

200

POWER OUTPUT vs POWER INPUT

V,,=20 V I,,=300 mA

80 ,

25

EFFICIENCY vs FREQUENCY

V,,=28 V I,,=300 mA P,,~60 W

50 loo

FREOUENCY (MHz)

1

150

200

Specifications Subject to Change Without Notice.

North America: Tel. [phone]

Fax [phone]

”

0 0.5

1 1.5 2 2.5 2.75 3

POWER INPUT(W)

= Asia/Pacific: Tel. [phone]

Fax [phone]

M/A-COM, Inc.

Europe: Tel. [phone]

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Fax [phone]