MACOM DU2860T Datasheet

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an AMP company

RF MOSFET Power Transistor, 6OW, 28V

2 - 175 MHz

Features

N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Bipolar Devices

. .

Absolute Maximum Ratings at 25°C

DU2860T

v2.00

-*-

Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain

Drain Efficiency

Load Mismatch Tolerance VSWR-T - 3O:l -

Specifications Subject to Change WAhout Notice.

North America: Tel. [phone]

Fax [phone] Fax [phone]

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ISS

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oss

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RSS
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n Asia/Pacific: Tel. [phone]

13 -

60 -

135 pF
120 pF

24 pF

V,,=28.0 V, F=l .O MHz
V,,=28.0 V, F=l .O MHz
V,,=28.0 V, F=l .O MHz
V,,=28.0 V, I,,=300 mA, P,,=60.0 W, F=l75 MHz

dB

V,,=28.0 V, I,,=300 mA, P,,=60.0 W, F=175 MHz

%

V,,=28.0 V, I,,=300 mA, P,#GO.O W, F=l75 MHz

Europe: Tel. [phone]

n

M/A-COM, Inc.

Fax [phone]

RF MOSFET Power Transistor, 6OW, 28V

Typical Broadband Performance Curves

DU2860T

v2.00

25

10 -

50

GAIN vs FREQUENCY

I’,,=28 V I,,=300 mA PO,=60 W

100

FREQUENCY (MHz)

150

801

EFFICIENCY vs FREQUENCY

ao-

200

2.5 50

POWER OUTPUT vs POWER INPUT

V,,=20 V I,,=300 mA

V,,=28 V I,,=300 mA PO”,.=60 W

100

FREQUENCY (MHz)

1

1.50

200

MIA-COM, Inc.

Specifications Subject to Change Wiiout Notice.

North America: Tel. [phone]

Fax [phone]

0

0.5

1 1.5

POWER INPUT(W)

2 2.5

m Asia/Pacific: Tel. [phone]

Fax [phone]

2.75

3

Europe: Tel. [phone]

u

Fax [phone]