MACOM DU2840S Datasheet

an AMP company

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RF M’OSFET Power Transistor, 4OW, 28V

2 - 175 MHz

Features

N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Bipolar Devices

. .

Absolute Maximum Ratings at 25°C

Parameter

Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation

JunctionTemperature
StorageTemperature

Thermal Resistance

1 Symbol (

V

DS

V

GS

1 ‘0s 1 8 1 * 1

PD
T,

T

STG

8

JC

Rating

65
20 V

125

200

-55 to +150

1.4

Units

V

W
“C

“C

“CiW

A 24.64 24.09 .970

B i 18.29 t 18.54 1 ,720

D 9.47 9.73 -373

E &22 6.48 .245

F 564 5.79 ,222
G 292 3.30 .115

m-

DU2840S

.980

1 ,730

,393
255
E28
.I30

Electrical Characteristics at 25°C

Parameter

Drain-Source Breakdown Voltage

I ~~~

Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
ForwardTransconductance
Input Capacitance

Output Capacitance
Reverse Capacitance

Power Gain
Drain Efficiency
Load MismatchTolerance

Specifications Subject to Change Without Notice.

North America: Tel. [phone] = Asia/Pacific: Tel. [phone]

Fax

[phone]

) Symbol 1 Min 1 Max ( Units )

) BV,,,

‘DSS
’05s

V

GSrnHI
GM

C

15s

C

055

C

E1c.s

--

I

1 G,

‘1D

VSWR-T -

1 55 1

2.0 6.0 V
1 -

13 - 1 dB 1
60 - %

- ) V ) V,,=O.OV, l,,=lO.OmA

2.0 mA

2.0 pA v,,=20.0 v, v,,=o.o v

S

90 pF
80 pF
16 pF

3O:l -

Fax ~81 (03) 3226-1451

V,,=28.0 V, V,,=O.O V

V,,=lO.O V, 1,,=200.0 mA
V,,=lO.O V, 1,,=2000.0 mA, AVo,=l .O V, 80 us Pulse
V,=28.0 V, F=l .O MHz
V,,=28.0 V. F=l .O MHz
V,,=28.0 V, F=l .O MHz

V,,=28.0 V, I,,=200 mA, P,,,-40.0 W, F=l75 MHz
V,,=28.0 V, I,,=200 mA, P,,=40.0 W, F=175 MHz
V,,=28.0 V, I,,=200 mA, P,,=40.0 W, F=175 MHz

Test Conditions

_.

M/A-COM, inc.

Europe: Tel. [phone]

=

Fax

[phone]

I

I

I

RF MOSFET Power Transistor, 4OW, 28V

Typical Broadband Performance Curves

DU2840S

V2.00

GAIN vs FREQUENCY

301

10 ,-

0

V,,=28 V I,,=200 mA Po,p40 W

25 50

FREQUENCY (MHz)

POWER OUTPUT vs POWER INPUT

60

V,,=28 V IDO= 00 mA

100

150 180

EFFICIENCY vs FREQUENCY

1

0 25

V,,=28 V I,,=200 mA P,,,=40 W

50

FREOUENCY (MHz)

loo 150

175

POWER OUTPUT vs SUPPLY VOLTAGE

F=l75 MHz I,,=200 mA P,,=l .O W

0.3

POWER INPUT (W)

Specifications Subject to Change Without Notice.

M/A-COM, Inc.

North America: Tel. [phone]

Fax [phone]

0.5

s Asia/Pacific: Tel. [phone]

Fax [phone]

SUPPLY VOLTAGE (V)

n

29

Europe: Tel. [phone]

Fax [phone]