MACOM DU2820S Datasheet

---

= ---

an AMP comDanv

=- i =

RF MOSFET Power Transistor, 2OW, 28V

2 - 175 MHz

Features

N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power

Lower Noise Figure Than Bipolar Devices

Absolute Maximum Ratings at 25°C

Parameter

Drain-Source Voltage V
Gate-Source Voltage V
Drain-Source Current
Power Dissipation

JunctionTemperature
Storage Temperature

Thermal Resistance

Symbol

0s
GS

1 4,s 1 24 t A 1

p rJ
TJ

T

STG

6

JC

Rating

65
20

62.5 W
200

-55 to +150

2.8

DU2820S

Units

V
V

“C
“C

“Cl-W

Electrical Characteristics at 25°C

I

Parameter

Drain-Source Breakdown Voltaae

Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
ForwardTransconductance
Input Capacitance

Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency

Load MismatchTolerance

Specifications Subject to Change Without Notice.

Symbol Min Max Units

BV..,, 65 -

‘ass
‘GSS

V

0sr-v
GM

C

15s

C

OS5

C

RSS

GP
‘70

VSWR-T - 3O:l -

M/A-COM, Inc.

North America: Tel. [phone]

Fax [phone]

m Asia/Pacific: Tel. t81 (03) 3226-1671

V V,.=O.O V, I,,=50 mA

1.0 mA

1.0 fl

2.0

500 - mS

13 -

60 -

6.0 V

45 pF

40 pF

a

PF
dB

%

Fax [phone]

J 1 4.04 1 4.55 [ X59 1 .l79

1 K

v,,=28.0 v, v,,=o.o v
vGs=20.0 v. v,,=o.o v

VDs=l 0.0 V, IDS=1 00.0 mA
V&O.0 V, 1,,=100.0 mA, AV,,=l .O V, 80 ps Pulse
v,,=28.0 v, F=l .o MHZ
V,,=28.0 V, F=l .O MHz

V,,=28.0 V, F=l .O MHz
vD,=2a.o V, I,,=100 mA, P,,f20 W, F=175 MHz
v,,=28.0 v, I,,=100 mA, PO,=20 W, F=l75 MHz
v,,=28.0 V. I,,=1 00 mA, P,,1=;20 W, F=l75 MHz

1 6.58 1 7.39 I .259 I 291 I

L 1 .I0 1 x5

Test Conditions

Europe: Tel. [phone]

n

1 404 1 Jo6

Fax [phone]

RF MOSFET Power Transistor, 2OW, 28V

Typical Broadband Performance Curves

DU2820S

v2.00

20

25

s
z.

t20 .
s

15 -

10

GAIN vs FREQUENCY

V,,=28 V I,,=1 00 mA Poe20 W

0

25

50 1W

FREQUENCY (MHz)

150

2cQ

0

EFFICIENCY vs FREQUENCY

V,,=28 V I,,=1 00 mA PO,,,.=20 W

25 50

FREQUENCY (MHz)

100

150

230

POWER OUTPUT vs POWER INPUT

3or

I’,,=28 V IDo= 00 mA

1

200 MHz

Specifications Subject to Change Without Notice.

North America: Tel. [phone]

Fax (800)

618-8883

0 0.2 0.4

n Asia/Pacific: Tel. [phone]

0.6 0.6
POWER INPUT(W)

Fax +81

1 1.2 1.4

[phone]

1.6 1.7

H

MIA-COM, Inc.

Europe: Tel. [phone]

Fax +44

(1344) 300

020