MACOM DU28200M Datasheet
an AMP company
RF MOSFET Power Transistor, 2OOW, 28V
2 - 175 MHz
Features
N-Channel Enhancemenr Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Competitive Devices
Absolute Maximum Ratings at 25°C
Parameter
Drain-SourceVoltage ( V,, ( 65
I
Gate-Source Voltage
Drain-Source Current
I Power Dissipation
Junction Temperature
StorageTemperature
Thermal Resistance
I Symbol I
V
OS
‘DS
1 P, / 389 1 W 1
TJ
T
STG
Rating
20 V
20 A
200
-65 to +150
DU28200M
v2.00
P&--4 I
1 Units 1
I v I
“C
“C
Electrical Characteristics at 25°C
Parameter
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
1 Gate Threshold Voltage
FonvardTransconductance
Input Capacitance
Output Capacitance
( Reverse Capacitance
Power Gain
Drain Efficiency
Load MismatchTolerance
* Per Side
Specifications Subject to Change Without Notice.
BVDss 65 - V
‘cm
‘GSS
I vG,rr,,
GM
C
ISS
C
OSS
I CFSS
GP
%
VSWR-T -
Test Conditions
V,,=O.O V, I,,=250 mA
5.0 n-IA V,,=28.0 V, V,,=O.O V‘
5.0 pA
1 2.0 1 6.0 1 v I v,,=~o.ov, 1,,=500.0 mA
2.5 - S V,,=lO.O V, I,,=50 A, ~v,,=l .O V, 80~ Pulse’
- 225 pF
200 pF V,,=28.0 V, F=l .O MHz’
1 - ( 40 1 pF 1 V,,=28.0 V, F=l.O MHz’
13 -
55 - %
lo:1 -
v,,=20.0 v, V,stO.O v
Vr,,=28.0 V, F=l .O MHz’
V,,=28.0 V, I,,=1 000 mA, Pe~200.0 W, F=l75 MHz
dB
V,,=28.0 V. I,,=1 000 mA, P,,
V-,=28.0 V. I,,=1000 mA. P,,s200.0 W, F=175 MHz
-200.0 W, F=175 MHz
I
I
RF MOSFET Power Transistor, 2OOW, 28V
Typical Broadband Performance Curves
DU28200M
v2.00
EFFICIENCY vs FREQUENCY
30
10 -I
GAIN vs FREQUENCY
V&3 V l,o=lOO mA P,f200 W
-
6or
50
25 50 100 150 200 25 50
FREQUENCY (MHz)
POWER OUTPUT vs POWER INPUT
300
z 250
5
P 200
5
a 150
0
cl- 100
;
f
.
V,,=28 V IDp=l 000 mA
30 MHz
f
100 MHz
200 MHz
VDD=28 V I,,=1000 mA P,,=200 W
loo 150 200
FRECXJENCY (MHz)
50
0 0.5 1 2 3 4 5
POWER INPUT (W)
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