MACOM DU2810S Datasheet

an AMP company

XF r =

RF MOSFET Power Transistor, lOW, 28V

2 - 175 MHz

Features

l N-Channel Enhancement Mode Device
l DMOS Structure
l Lower Capacitances for Broadband Operation
l Common Source Configuration
l Low Noise Floor

Absolute Maximum Ratinas at 25°C

( Parameter

1 Drain-SourceVoltage ) V, 1 65

Gate-Source Voltage
Drain-Source Current
Power Dissipation

( JunctionTemperature 1 T, ) 200 1 “C 1

StorageTemperature

Thermal Resistance

1 Symbol 1 Rating 1 Units 1

I v I

T

V

‘0s
PO

ST0

e

JC

OS

20 V

2.8

35’

-65to+150 “C

2 “Cl-W

W

A

DU2810S

Typical Device \mpedance

Frequency (MHz)

30

50

100

200

Z,, is the series equivalent input impedance of the device from gate to source.

2

is the series equivalent load impedance as measured from drain to ground.

LOAD

*,, (OHMS)

-j

27.0

24.0

18.0

12.0

v&3 V, 1,,=100 mA, Po,,=lO.O Watts

- j

-j

- j

11.0

15.0

18.0

19.0

RF Test Fixture

+“r;s

+“m

*,onD (OHMS)

23.0 - j 3.0
j

19.0 - 5.0

14.0 - 6.0
j

9.0 -j 5.0

,I

INPUT

c2
Cl c3

c4 c5

C6

Rl

L2
Ll
L3

Ql

Specifications Subject to Change Without Notice.

20 pF, UNELCU
500 pF, UNELCCI
1000 pF, UNELCO

5 uF ELECTROLYTIC
12K OHM
4 TURNS OF Nil, 16 AWG ON JO’ ID

2 TURNS OF Nil. 16 AWG ON .35’ ID
5 TURNS OF NO. 16 AWG UN 035’ ID

DU2810S

9-28

North America: Tel. [phone]

Fax [phone]

l Asia/Pacific: Tel. [phone]

Fax [phone]

M/A-COM, Inc.

#

Europe: Tel. [phone]

Fax [phone]