MACOM DU2805S Datasheet

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RF MOSFET Power Transistor, 5W, 28V

2 - 175 MHz

Features

l N-Channel Enhancement Mode Device
l DMOS Structure
l Lower Capacitances for Broadband Operation
l High Saturated Output Power
l Lower Koise Figure Than Bipolar Devices

Absolute Maximum Ratings at 25°C

Parameter Symbol Rating Units

Drain-SourceVoltage
Gate-Source Voltage
Drain-Source Current

Power Dissipation

JunctionTemperature

( Storage Temperature

Thermal Resistance 0

I ‘05 I 1.4 I * I

I TSTG

V
V

PO
T,

JC

OS
0s

65
20

15.8
200 “C

1 -55to+150 I “C I

11.1 “C/w

I v

DU2805S

v2.00

V

W

Electrical Characteristics at 25°C

Specifications Subject to Change Without Notlce.

North America:

Tel. [phone]

Fax [phone]

m Asia/Pacific: Tel. [phone]

Fax [phone]

M/A-COM, Inc.

Europe: Tel. [phone]

l

Fax [phone]

RF MOSFET Power Transistor, 5W, 28V

Typical Broadband Performance Curves

DU2805S

v2.00

z
t4

2
$3

CAPACITANCES vs VOLTAGE

F=l .O MHz

v,, w

POWER OUTPUT vs POWER INPUT

6

5

V,,=28 V I,,=50 mA

GAIN vs FREQUENCY

25

10

60

V,,=28 V I,,=50 mA P,,&O W

100

FREQUENCY (MHz)

POWER OUTPUT vs VOLTAGE

V,,=28 V IDo= mA F=175 MHz P,,=315 mW

150

200

1

/

0

0.01 0.02 0.04

Specifications Subject to Change Wiiout Notice.

0.1 0.2 0.3

POWER INPUT(W)

M/A-COM, Inc.

North America: Tel. [phone]

Fax [phone]

0.4 0.45

2.5 5

- Continued next page -

= Asia/Pacific: Tel. [phone]

Fax [phone]

10 15

Europe: Tel. [phone]

n

20 25 30

v,, (V)

Fax [phone]

35