MACOM DU1260T Datasheet

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RF MOSFET Power Transistor, 6OW, 12V

2 - 175 MHz

Features

N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation

High Saturated Output Power
Lower Noise Figure Than Bipolar Devices
Specifically Designed for 12 Volt Applications

Absolute Maximum Ratings at 25°C

DU1260T

v2.00

Electrical Characteristics at 25°C

M/A-COM, inc.

North America: Tel. [phone]

Specifications Subject to Change Wiihout Notice.

n Asia/Pacific: Tel. [phone]

Fax [phone]

Fax [phone]

Europe: Tel. [phone]

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Fax [phone]

RF MOSFET Power Transistor, 6OW, 12V

Typical Broadband Performance Curves

DU1260T

VZDO

DRAIN EFFICIENCY vs FREQUENCY

V,p12 V I,,=600 mA PO,=60 W

0 50

FREQUENCY(W)

POWER OUTPUT vs POWER INPUT

60

V&2 V I,=600 mA

150

200

I

GAIN vs FREQUENCY

25

20

3 15
s

z
2 10

5

0

25

V,,=12 V I,,=600 mA Po~60 W

50 100

FREQUENCY(W)

POWER OUTPUT vs SUPPLY VOLTAGE

601

I,,=600 mA F=175 MHz P,,=&O W

. I

150 175

I

”

0.1 0.2 0.3 1 2 3 4 5

POWER INPUT(W)

Specifications Subject to Change Wiout Notice.

6 7

North America: Tel. [phone] m Asia/Pacific: Tel. [phone]

Fax [phone] Fax [phone] Fax [phone]

SUPPLY VOLTAGE(V)

MIA-COM, Inc.

Europe: Tel. [phone]

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