MACOM DU1230S Datasheet

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an AMP company

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RF MOSFET Power Transistor, 3OW, 12V

2 - 175 MHz

Features

N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation

High Saturated Output Power
Lower Noise Figure Than Bipolar Devices
Specifically Designed for 12 Volt Applications

. .

Absolute Maximum Ratings at 25°C

Parameter

Drain-SourceVoltage
Gate-Source Voltage
Drain-Source Current

1 Power Dissipation

Junction Temperature
Storage Temperature
Thermal Resistance

1 Symbol 1

V

DS

V

0s

‘Ds

I PO I

TJ

T

STG

Rating

40 V
20

8

175

200 “C

-55to+150 “C

I BJC I 1 I “C/w I

1 Units 1

V
A

I w I

1 E

1 6.22 1 6.48 1 245 1 255 1

F 5.64 5.79 222 22s

G 1 2.92 1 3.30 1 .llS 1 ,130

DUI 230s

Electrical Characteristics at 25°C

Input Capacitance
Output Capacitance C
ReverseCapacitance C
Power Gain
Drain Efficiency

Load Mismatch Tolerance

Specifications Subject to Change Without Notice.

North America: Tel. [phone]

Fax [phone]

0%

Rss

GP

9D

VSWR-T - 3O:l -

n Asia/Pacific: Tel. [phone] n Europe: Tel. [phone]

120 pF

24 pF

9.0 - dB
50 - %

Fax [phone] Fax [phone]

V,,=12.0 V, F=l.O MHz
V&2.0 V, F=l .O MHz
V&2.0 V, F=l .O MHz

Vb,=12.0 V, I,,=200 mA, PO,=30 W, F=175 MHz
V,,=12.0 V, I,,=200 mA, PO,=30 W, F=175 MHz
V,,=l2.0 V, I,,=200 mA, PO,,=30 W, F=l75 MHz

MIA-COM, Inc.

RF MOSFET Power Transistor, 3OW, 12V DU1230S

Typical Broadband Performance Curves

v2.00

60

70

g

60

$

50

2

ii

40.

b
u.
w

30.

20

10 -

0 50

EFFICIENCY vs FREQUENCY

V,,=lZ V I,,=200 mA Poe30 W

150 200

FREOUENCY (MHz)

40

g 30

5

5

20

0
5

3

g 10

GAIN vs FREQUENCY

20

12 -

10

25

v,,=12 V IDo= mA PouT=30 W

50

FREQUENCY (MHz)

100

POWER OUTPUT vs SUPPLY VOLTAGE

I,,=200 mA F=l75 MHz Pp3.0 W

150

175

I

0 0.2

M/A-COM, inc.

North America:

0.3

1 2

POWER INPUT(W)

3 4

5

6 7

0

6 10

SUPPLY VOLTAGE (V)

15

Specifications Subject to Change Without Notice.

Tel. [phone] w Asia/Pacific: Tel. [phone]

Europe: Tel. [phone]

m

Fax [phone] Fax [phone] Fax [phone]