MACOM DR65-0002-TBG, AT10-0009TR, AT10-0009-TB, AT10-0009 Datasheet

Voltage Variable Absorptive
Attenuator, 800 - 1000 MHz

V 7.00

AT10-0009

Features

n Input IP3: +31 dBm Min. (Full Attenuation Range)
n Input IP3 is 15 -20 dB Better Than GaAs
n Linear Operation: +20 dBm Min.
n Plastic SOIC, Wide Body, SMT Package
n 38 dB Dynamic Range (With 30 mA Bias Current)
n Single Control Voltage
n 50 ohm Impedance
n Linear Driver, DR65-0002, Available
n Test Boards are Available
n Tape and Reel Packaging Available

Description

M/A-COM's AT10-0009 is a PIN diode based voltage
variable attenuator. This device is in a SOIC-16, wide body
plastic surface mount package. These attenuators have
linear operating power and input intercept point levels
15 - 20 dB better than GaAs FET MMIC voltage variable
attenuators. They are ideally suited for use where low
distortion, high linear operating power and high dynamic
range are required. These devices are optimized for the
GSM frequency band, but exhibit excellent performance
and repeatability over the entire specified frequency band.
The AT10-0009 is ideally suited for wireless
communications systems.

SOW-16

Package outline conforms to JEDEC standard MS-013AA.

Electrical Specifications: TA = 25°C

Parameter Test Conditions Frequency Units Min Typical Max

Insertion Loss 0 volts 800-1000 MHz

Attenuation

(Above Loss)

Frequency

Flatness

VSWR 0 to 30 dB attenuation 800-1000 MHz

Switching Speed 50% Control to 90%/10% RF 800-1000 MHz µs — — 10.0
Linear Operation — 800-1000 MHz dBm — +20 —

Input IP

3

I

Control

12 mA bias current 800-1000 MHz

0 to 30 dB attenuation 800-1000 MHz

Two-tone inputs up to +10 dBm 800-1000 MHz dBm +35 +40 —-

— 800-1000 MHz mA — — 30

925 - 960 MHz

925 - 960 MHz

925 - 960 MHz

925 - 960 MHz

dB
dB

dB
dB

dB
dB

Ratio
Ratio

—
—

30
33

—
—

—
—

3.5

3.3

-

38

1.5

0.4

1.6:1

1.4:1

4.2

3.9
—

—

2.5

0.8

2.0:1

1.7:1

Voltage Variable Absorptive Attenuator, 800 - 1000 MHz

AT10-0009

V 7.00

Pin Configuration

Pin # Function Pin # Function

1 GND 9 GND
2 RF 10 RF
3 GND 11 GND
4 GND 12 GND
5 GND 13 GND
6 GND 14 GND
7 Bias

2

15 Bias

2

8 GND 16 GND

2. Bias currents may be applied to pin 7 or 15. The unused pin
should be isolated.

Absolute Maximum Ratings 1

Parameter Absolute Maximum

Max. Input Power +27 dBm

Operating Temperature -40°C to +85°C

Storage Temperature -65°C to +125°C

1. Operation of this device above any one of these parameters

may cause permanent damage.

Recommended PCB Configuration

Typical Performance Curves

+25°C

6

5

4

3

Loss (dB)

2

1

750 825 900 975 1050

+85°C

Frequency (MHz)

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

-40°C

Attenuation Flatness (dB) @ +25°C Insertion Loss

30 dB 20 dB 10 dB Ref

3

2

1

0

-1

Flatness (dB)

-2

-3
750 825 900 975 1050

Frequency (MHz)

2