MACOM AT-635TR, AT-635 Datasheet
Vo l t age Va r i a ble Absorptive Attenu a t o r,35 dB
DC - 2 GHz
Features
● 35 dB Voltage Variable Attenuation @ 1 GHz
● Single Voltage Control 0 to -4 Volts
● Low DC Power Consumption: 10 mW
● Nanosecond Switching Speed
● Temperature Range: -40˚C to +85˚C
● Low Cost SOIC14 Plastic Package
● Tape and Reel Packaging Available
Description
M/A-COM’s AT-635 is a GaAs MMIC voltage variable absorptive
attenuator in a low cost SOIC 14-lead surface mount plastic package. The AT-635 is ideally suited for use where attenuation fine
tuning, fast switching and very low power consumption are
re q u i red. Typical applications include radio, cellular, GPS equipment and other Automatic Gain/Level Control circ u i t s .
The AT-635 is fabricated with a monolithic GaAs MMIC using a
m a t u re 1-micron process. The process features full chip passivation for increased perf o rmance and re l i a b i l i t y .
1
AT-635
V 3.00
S O - 1 4
Ordering Information
Part Number Package
AT-635 PIN SOIC 14-Lead Plastic Package
AT-635TR Forward Tape & Reel
Electrical Specifications,TA= +25°C
Parameter Test Conditions
Insertion Loss DC – 0.1 GHz dB 6.5 6.7
Flatness DC-2 GHz 10 dB Attenuation dB +/-1.0 +/-1.3
(Peak to Peak) 20 dB Attenuation dB +/-1.2 +/-1.5
VSWR 2.0:1
Trise, Tfall 10% to 90% RF, 90% to 10% RF nS 2
Ton, Toff 50% Control to 90% RF, 50% Control to 10% RF nS 4
Transients In Band mV 30
Power Linear Operation dBm 13
Handling Absolute Max Input Power dBm 21
IP
2
IP
3
1.Refer to “Tape and Reel Packaging”Section, or contact factory.
2.All measurements at 1 GHz in a 50Ω system, unless otherwise specified.The A control voltage 0 to -4 volts @ 20 µA typ.
3. For levels above 6 dB attenuation. For levels below 6 dB, the minimum specification numbers apply.
Measured Relative 0.05 GHz dBm 34
to Input Power 0.5 – 2.0 GHz dBm 47
(for two-tone input power up to +5 dBm)
Measured Relative 0.05 GHz dBm 18 31
to Input Power 0.5 – 2.0 GHz dBm 18.5 36
(for two-tone input power up to +5 dBm)
2
DC – 0.5 GHz dB 6.7 7.0
DC – 1.0 GHz dB 7.2 7.4
DC – 2.0 GHz dB 7.5 7.8
30 dB Attenuation dB +/-1.2 +/-1.5
Unit Min. Typ. Max
(3)
(3)
Voltage Variable Absorptive Attenuator, 35 dB AT-635
Absolute Maximum Ratings
1
Functional Sch e m a t i c
Parameter Absolute Maximum
Max. Input Power +21 dBm
Control Voltage +5 V, -8.5 V
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C
1.Operation of this device above any one of these parameters may
cause permanent damage.
Pin Configuration
V 2.00
Pin No. Description
1 A
2 GND
3 GND
4 GND
5 GND
6 GND
7 GND
Typical Pe r fo r m a n c e
Pin No. Description
8 RF2
9 GND
10 GND
11 GND
12 GND
13 GND
14 RF1
Loading...