1 Bit, 10 dB, GaAs Digital Atten uator
0.02 - 2 GHz
Features
•CMOS Control Interface
•Low Power Consumption
Guaranteed Specifications
Frequency Range 0.02 – 2.0 GHz
Nominal Attenuation
Attenuation Accuracy 0.02 – 2.0 GHz +/-0.5 dB Max
VSWR 0.02 – 2.0 GHz 1.9:1 Max
Reference Insertion Loss
2
1
(From -55°Cto +85°C)
10 dB
0.02 – 1.0 GHz +/-0.3 dB Max
0.02 – 0.5 GHz +/-0.2 dB Max
0.02 – 0.2 GHz +/-0.2 dB Max
0.02 – 1.0 GHz 1.3:1 Max
0.02 – 0.5 GHz 1.3:1 Max
0.02 – 0.2 GHz 1.3:1 Max
0.02 – 2.0 GHz 2.7 dB Max
0.02 – 1.0 GHz 1.0 dB Max
0.02 – 0.5 GHz 0.9 dB Max
0.02 – 0.2 GHz 0.8 dB Max
Operating Characteristics
Impedance 50 Ohms Nominal
Switching Characteristics
Ton, Toff (50% CTL to 90%/10% RF) 100 ns Typ
Trise, Tfall (10%/90% or 90%/10% RF) 40 ns Typ
Switching Transients (Unfiltered) 50 mV Typ
Input Power for 1 dB Compression
0.5 – 2.0 GHz +24 dBm Typ
0.05 GHz +18 dBm Typ
Intermodulation Intercept Point (for two-tone input power up to +5 dBm)
Intercept Points IP2 IP3
0.5 – 2.0 GHz +58 +38 dBm Typ
0.05 GHz +54 +35 dBm Typ
Bias Power +5 VDC @ 1 mA Max
Control Voltages
Vin Low (0) 0.0 to 1.5V @ 1µA Max
Vin High (1) 3.5 to 5.0V @ 1µA Max
1.All specifications apply with 50 ohm impedance connected to all RF ports, with +5
VDC bias voltage.
2.Above reference insertion loss.
3.Contact the factoy for standard or custom screening requirements.
T0-8-2
0.250 MIN
0.200 TYP (5.08)
0.100 TYP (2.54)
P7
P4
0.60 DIA
(15.2 )
Unless Otherwise Noted: .xxx = ± 0.010 (.xx = ± 0.25)
P10
0.400 (10.16)
TYP
0.200 TYP (5.08)
P1
Bottom of Case is AC Ground
Dimensions in ( ) are in mm.
.xx = ± 0.02 (.x = ±0.5)
(6.35)
0.018 ± 0.005
PIN DIA
(0.46 ± 0.13)
Functional Sc hematic (T op View)
GND
10 dB
GND
GND
RF OUT
GND
+5V
GND
RF IN
GND
AT-358
0.187 MAX
(4.75)
Ordering Inf ormation
Model No. Package
AT-358 PIN TO-8-2
CI
GND
GND
Truth T able
C1 State
0 Reference Loss
1 Attenuation
Specifications Subject to Change Without Notice. V2.01
1-Bit, 10 dB, GaAs Digital Attenuator AT-358
Absolute Maximum Ratings
Parameter Absolute Maximum
Max. Input Power
0.05 GHz +27 dBm
0.5 – 2.0 GHz +32 dBm
Bias Voltage 0.5 to +7 V
Control Voltage -0.5 to V bias + 0.5 V
Operating Temperature –55˚C to +125˚C
Storage Temperature –65˚C to +150˚C
1. Operation of this device above any one of these parameters may
cause permanent damage.
Typical Performance
REFERENCE INSERTION LOSS vs FREQUENCY
0
-0.5
-1.0
-1.5
LOSS (dB)
-2.0
1
VSWR vs FREQUENCY
2.0
1.8
LOSS STATE
1.6
VSWR
1.4
ATTENUATION STATE
1.2
-2.5
0.50.02
ATTENUATION FLATNESS vs FREQUENCY
+0.5
+0.25
0
-0.25
DEVIATION FROM
NOMINAL ATTENUATION (dB)
-0.5
0.02
0.5 1.0
FREQUENCY (GHz)
1.0
FREQUENCY (GHz)
1.5 2.0
1.5 2.0
1.0
0.50.02
FREQUENCY (GHz)
1.0
1.5 2.0
Specifications Subject to Change Without Notice. V2.01