MACOM AT-250TR, AT-250RTR, AT-250 Datasheet
Vo l t age Va r i a ble Absorptive Attenuator
DC - 2 GHz AT- 2 5 0
V 2.00
Features
● 12 dB Voltage Variable Attenuation
● Low Intermodulation Products
● Low DC Power Consumption: 50 µW
● Single Voltage Control 0 to -4 Volts
● Nanosecond Switching Speed
● Temperature Range: -40˚C to +85˚C
● Low Cost SOIC 8 Plastic Package
● Tape and Reel Packaging Available
1
Description
M/A-COM’s AT-250 is a GaAs MMIC voltage variable absorptive
attenuator in a low cost SOIC 8-lead surface mount plastic package. The AT-250 is ideally suited for use where attenuation fine
tuning, fast switching and very low power consumption are
re q u i red. Typical applications include radio, cellular, GPS equipment and other Automatic Gain/Level Control circuits.
S O - 8
The AT-250 is fabricated with a monolithic GaAs MMIC using a
m a t u re 1-micron process. The process features full chip passivation for increased perf o r mance and reliability.
Ordering Information
Part Number Package
AT-250 PIN SOIC 8-Lead Plastic Package
AT-250TR Forward Tape & Reel
AT-250RTR Reverse Tape & Reel
Electrical Specifications,TA= +25°C
Parameter Test Conditions
Insertion Loss DC – 0.1 GHz dB 2.9 3.1
Flatness DC – 0.1 GHz dB +/– 0.1 +/– 0.3
(Peak to Peak) DC – 0.5 GHz dB +/– 0.2 +/– 0.4
VSWR 2.1:1
Trise, Tfall 10% to 90% RF, 90% to 10% RF nS 3
Ton, Toff 50% Control to 90% RF, 50% Control to 10% RF nS 5
Transients In Band mV 10
Power Linear Operation dBm 13
Handling Absolute Max Input Power dBm 21
IP
2
IP
3
1. Refer to “Tape and Reel Packaging”Section, or contact factory.
2.All measurements at 1 GHz in a 50Ω system, unless otherwise specified.A control voltage 0 to -4 volts @ 20 µA typ.
3. For levels above 6 dB attenuation. For levels below 6 dB, the minimum specification numbers apply.
Measured Relative 0.05 GHz 28 34
to Input Power 0.5 – 2.0 GHz dBm 40 47
(For two-tone Input Power Up to +5 dBm)
Measured Relative 0.05 GHz dBm 18 31
to Input Power 0.5 – 2.0 GHz dBm 18.5 36
(For two-tone Input Power Up to +5 dBm)
2
DC – 0.5 GHz dB 3.0 3.2
DC – 1.0 GHz dB 3.2 3.5
DC – 2.0 GHz dB 3.4 3.8
DC – 1.0 GHz dB +/– 0.5 +/– 0.8
DC – 2.0 GHz dB +/– 1.2 +/– 1.5
Unit Min. Typ. Max
(3)
(3)
Voltage Variable Absorptive Attenuator AT-250
Absolute Maximum Ratings
Parameter Absolute Maximum
Max. Input Power +21 dBm
Control Voltage +5 V, -8.5 V
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C
1.Operation of this device above any one of these parameters
may cause permanent damage.
1
Functional Sch e m a t i c
Typical Pe r fo r m a n c e
Pin Configuration
Pin No. Description
1 RF1
2 GND
3 GND
4 A
5 GND
6 GND
7 GND
8 RF2
V 2.00
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