MACOM AT-110TR, AT-110RTR, AT-110 Datasheet

Voltage Variable Absorptive Attenuator, 30 dB

0.5 - 2 GHz AT-110

V 2.00

F e a t u r e s

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Single Positive Voltage Control 0 to +5 Vo l t s

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30 dB Voltage Variable Attenuation

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±2 dB Linearity from BSL

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Low DC Power Consumption

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Te m p e r a t u re Range: -40°C to +85°C

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Low-Cost SOIC 8 Plastic Package

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Tape and Reel Packaging Av a i l a b l e

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Fast Switching Speed

D e s c r i p t i o n

M/A-COM’s AT-110 is a linear GaAs MMIC voltage
variable absorptive attenuator in a low-cost SOIC
8-lead surface mount plastic package. The AT-110 has
a faster switching speed than the AT-108 or AT- 1 0 9 .
The AT-110 is ideally suited for use where linear
attenuation fine tuning and very low power com­sumption are re q u i red. Typical applications include
r a d i o ,
c e l l u l a r, GPS equipment and automatic gain/level
c o n t rol circ u i t s .

The AT-110 is fabricated with a monolithic GaAs
MMIC using a mature 1-micron process. The pro c e s s
f e a t u res full chip passivation for increased perf o r­mance and re l i a b i l i t y .

SO-8

Ordering Information

Part Number Package

AT-110 SOIC 8-Lead Plastic Package
AT-110TR Forward Tape & Reel*
AT-110RTR Reverse Tape & Reel*

If specific reel size is required, consult factory for part number

*

assignment.

Typical Electrical Specifications1,TA= +25°C

Parameter Test Conditions Units Min. Typ. Max.

Insertion Loss 0.5 - 1.0 GHz dB 2.8 3.0

1.0 - 2.0 GHz dB 3.3 3.6

Attenuation 0.5 - 16 GHz dB 30

1.0 - 26 GHz dB 25

Flatness 0.5 - 1.0 GHz dB ±0.5 ±0.8
(Peak-to-Peak) 1.0 - 2.0 GHz dB ±1.2 ±1.5

VSWR 2:1
Trise, Tfall 10% to 90% RF, 90% to 10% RF µS 0.2

Ton, Toff 50% Control to 90% RF, Control to 10% RF µS 0.2
Transients In-band mV 70

1. All measurements at 1 GHz in a 50-Ω system, unless otherwise specified.The RF ports must be blocked outside of the package
from ground or any other voltage.

Voltage Variable Absorptive Attenuator, 30 dB AT-110

Absolute Maximum Ratings

Parameter Absolute Maximum

Maximum Input Power +21 dBm
Supply Voltage V
Control Voltage V
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C

1. Operation of this device above any one of these parameters may
cause permanent damage.

CC

C

Typical Performance

RELATIVE ATTENUATION vs CONTROL VOLTAGE
@ +25°C, F = 1800 MHz

0

-5

-10

-15

-20

-25

-30

-35
5 4 3 2 1 0

CONTROL VOLTAGE (VOLTS)

1

-1 V, +8 V

-1 V, VCC+0.5 V

Functional Schematic

VCC= +5 VDC ± 0.5 VDC @ 300 µA max.
VC= 0 VDC to +5 VDC @ 6 mA max.
External DC blocking capacitors are required on all RF ports.

INSERTION LOSS vs FREQUENCY

4.0

3.0

2.0

1.0

0

0.5 1.0 1.5 2.0

FREQUENCY (GHz)

V 2.00

ATTENUATION vs CONTROL VOLTAGE
@ +25°C, F = 900 MHz

0

-10

-20

-30

-40
5 4 3 2 1 0

CONTROL VOLTAGE (VOLTS)

ATTENUATION vs TEMPERATURE,
NORMALIZED TO +25°C, F = 900 MHz

3

2

1

0

-1

-2

-3
5 4 3 2 1 0

+85°C

CONTROL VOLTAGE (VOLTS)

-40°C