MACOM AM55-0016SMB, AM55-0016RTR, AM55-0016, AM55-0016TR Datasheet

Switched Low Noise Amplifier, 800-1000 MHz AM55-0016

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AM55-0016

Switched Low Noise Amplifier
800 - 1000 MHz

Features

High Gain State:

•

- Gain: 16dB, Noise Figure: 1.6dB

- Input IP3: +3dBm (@2.7V, 25mA)

Low Gain State:

•

- Insertion Loss: 5dB, Input IP3: +24dBm
Single Supply: +2.7 to +5 VDC

•

Low Cost MSOP-8 Plastic Package

•

Adjustable current: 10 to 30 mA with external resistor

•

Description

M/A-COM’s AM55-0016 is a high dynamic range, switchable
low noise amplifier in a low cost, MSOP 8-lead, surface mount,
plastic package. The design utilizes a patented switching
technique to provide a low insertion loss, high input IP
state in parallel with the high gain, low noise state. The LNA
employs external input matching to obtain optimum noise figure
performance and operating frequency flexibility. The
AM55-0016 also features flexible biasing to control the current
consumption vs. dynamic range trade-off. Its current can be
controlled over a range of 10 mA to 30 mA with an external
resistor.

Typical applications include receiver front ends in cellular band
CDMA handsets. It is also useful as a switched gain block, buffer
or driver in portable cellular systems.

The AM55-0016 is fabricated using a low-cost 0.5-micron gate
length GaAs MESFET process. The process features full
passivation for increased performance and reliability.

bypass

3

MSOP-8

Functional Block Diagram

RF

-

-

°

IN

°

RF

OUT

Ordering Information

Part Number Package

AM55-0016 MSOP 8-Lead Plastic Packa
AM55-0016TR Forward Tape and Reel*
AM55-0016RTR Reverse Tape and Reel*
AM55-0016SMB Desi

* If specific reel size is required, consult factory for part number.

ner’s Kit

°

e

Electrical Specifications1

TA = +25°C, Z0=50Ω, F=881 MHz, PIN= -30 dBm, VDD=2.7 V, IDD=10 mA

Parameter Test Conditions Units Min. Typ. Max.

HIGH GAIN STATE,

e control = 2.7 volts

Volta
Gain dB — 16 —
Noise Fi
Input IP3 I

ure dB — 1.6 1.8

= 10 mA, VDD = 2.7V

DD

I

= 25 mA, VDD = 2.7V

DD

dBm
dBm

—
—

-2

+3
Input VSWR / Output VSWR — — 2.0:1
Reverse Isolation dB — 32 —

LOW GAIN STATE,

Insertion Loss

Volta

e control = 0 volts

= 100 µA

I

DD

dB — 5 —
Input IP3 dBm — +24 —
Input VSWR — — 2.3:1 —
Output VSWR — — 2.0:1 —

1. Refer to

M/A-COM Division of AMP Incorporated ■ North America: Tel. [phone], Fax [phone] ■ Asia/Pacific: Tel.[phone], Fax [phone]

■

Europe: Tel. [phone], Fax+ 44 (1344) 300 020

www.macom.com

Typical Performance Data

AMP and Connecting at a Higher Level are trademark s.

Specifications subject to change without notice.

for performance versus frequency and bias.

—
—

V2.00

Switched Low Noise Amplifier, 800-1000 MHz AM55-0016

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Absolute Maximum Ratings

1

Parameter Absolute Maximum

V

DD

+6 VDC
Input Power 0 dBm
Current 30 mA
Channel Temperature
Operatin
Stora

1. Exceeding any one or combination of these limits may cause
permanent damage.

2. Typical thermal resistance (

Temperature -40°C to +85°C

e Temperature -65°C to +150°C

External Circuitry Parts List

2

θ

) = +99°C/W.

jc

+150°C

1

Part Value Purpose

C1, C2 1000 pF Source Bypass
C3, C4 47 pF By-Pass

C5, C6, C7 10 nF By-Pass

L1 22 nH Tunin

RBIAS see note 2 Source Bias Resistor

U1 UMH9N Dual Bipolar Transistor

1. All external ci rcuitry parts are readily available, low cost surface
mount components (0.040 inches x 0.020 inches or 0.060 inches x

0.030 inches).

2. RBIAS is chos en to set the desired current,

For: I

~10 mA, R1 = 75 ohms;

dd

I

~20 mA, R1 = 25 ohms;

dd

I

~30 mA, R1 = 9 ohms.

dd

External Circuitry

VDD

C3C5

1

8

2

RFIN

L1

C1

7

3

6

45

RBIAS

U1

C2

Pin Configuration

Pin No. Pin Name Description

1 VDD1 Sta
2 IN RF Input
3 VS1 Sta
4 GND RF and DC Ground
5 VS2 Sta
6 OUT RF Output
7 VDD2 Sta
8 VCTL Switch Control Volta

e 1 Supply Voltage

e 1 Source

e 2 Source

e 2 Supply Voltage

C6C4

RFOUT

VCTL

C7

e

Recommended PCB Configuration

Layout View

C3

C5

C7

L1

U2

C1

C2

U1

RBIAS

C6
C4

Cross Section View

RF Traces + Components

RF Ground
DC Routing

Customer Defined

The PCB dielectric between RF traces and RF ground layers
should be chosen to reduce RF discontinuities between 50 Ω
lines and package pins. M/A-COM recommends an FR-4
dielectric thickness of 0.008” (0.2 mm) yielding a 50 Ω line
width of 0.015” (0.38 mm). The recommended metalization
thickness is 1 ounce copper.

V2.00

M/A-COM Division of AMP Incorporated ■ North America: Tel. [phone], Fax [phone] ■ Asia/Pacific: Tel.[phone], Fax [phone]

■

Europe: Tel. [phone], Fax+ 44 (1344) 300 020

www.macom.com

AMP and Connecting at a Higher Level are trademark s.

Specifications subject to change without notice.