Preliminary Specifications
250 m W Linea r Po wer Amplifier and T /R Switch
1.8 - 2.0 GHz
Features
●
Operates Over Full PCN/PCS/PHS Bands
●
Operates Over +3 V to +5 V Supply Voltage
●
+24 dBm P
●
35% PAE @ P
●
On-Chip T/R Switch, Linear Operation to +30 dBm
●
Low Cost SSOP-28 Plastic Package
Description
M/A-COM’s AM55-0004 power amplifier/switch integrates a
power amplifier and transmit/receive switch in a low cost
SSOP package. The power amplifier delivers +24 dBm of
linear power with high efficiency and can be operated at
supply voltages as low as 2.7 V. It is ideally suited for
QPSK or other linearly modulated systems in the 1.8 to 2.0
GHz frequency band.
The power amplifier/switch is fully monolithic and requires
only one output capacitor for power match. The T/R switch
achieves good insertion loss and isolation without degrading
the overall linearity.
The AM55-0004 is ideally suited for final stage power
amplification in linear TDD systems. The integrated switch is
convenient for duplexing. The AM55-0004 can also be used
as a driver stage for high power systems. Typical applications
include Japanese PHS systems or PCN/PCS transmit chains.
M/A-COM’s AM55-0004 is fabricated using a mature
0.5-micron gate length GaAs process. The process features
full passivation for increased performance and reliability.
Typical at PA Out
1dB
for Linear Operation
1dB
AM55-0004
SSOP-28
+.0037
.3900
-.0041
+.0025
.0275
-.0025
+0,06
0,7
-0,06
PIN 1
.057 ±.003
1,45±0,08
.007 ±.003
0,18±0,08
.025
0,64
Dimensions are inches over millimeters.
Ordering Information
Part Number Description
AM55-0004 SSOP 28-Lead Plastic Package
AM55-0004TR Forward Tape & Reel*
AM55-0004RTR Reverse Tape & Reel*
AM55-0004SMB Designer’s Kit
If specific reel size is required, consult factory for part
*
number assignment.
9,91
+0,09
-0,1
+.004
.010
-.001
+0,1
0,25
-0,03
.004 (0,10)
+.0034
.1540
-.0043
+0,09
3,91
-0,11
.015 (0,38) X 45°
.236±.008
5,99±0,2
.0080
.028
0,71
0,2
0-8°
+.022
-.013
+0,56
+.0018
-.0005
+0,05
-0,01
-0,33
Typical Electrical Specifications
Test conditions: Frequency: 1.9 GHz, V
VG2adjusted for 65 mA quiescent bias on V
Parameter Units Min. Typ. Max.
Power Amplifier
Linear Gain dB 22 24
Power Output @ P
Current From Positive Supply @ P
Input VSWR 2.0:1
T/R Switch
Insertion Loss dB 0.6 1.0
Input Match 1.5:1
Isolation dB 15 20
Specifications Subject to Change Without Notice V2.00
M/A-COM Inc. ■ 1011 Pawtucket Boulevard, Lowell, MA 01853 USA ■ Telephone: 800-366-2266
at PA OUT port dBm 22.5 24
1dB
1dB
DD1
= V
DD2
, TA= +25°C
DD2
= 4.8 V ±10%, VG1adjusted for 30 mA quiescent bias on V
mA 75 175 275
DD1
,
1
250 mW Linear Power Amplifier and T/R Switch AM55-0004
Absolute Maximum Ratings
1
Parameter Absolute Maximum
Max. Input Power
Operating Voltages
2
2
+23 dBm
VDD= 7 V
V
= -5 V
GG
V
- VGG= 8 V
DD
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C
1. Exceeding these limits may cause permanent damage.
2. Ambient temperature (TA) = +25°C
Pin Configuration
Pin No. Pin Name Description
1 GND DC and RF Ground
2 VSW Complimentary T/R Switch Control,
3 GND DC and RF Ground
4 Tx IN Transmit side of T/R switch
5 GND DC and RF Ground
6 GND DC and RF Ground
7 ANT IN/OUT Common port of T/R switch which
8 GND DC and RF Ground
9 Rx OUT Receive side of T/R switch
10 GND DC and RF Ground
11 GND DC and RF Ground
12 V
13 SAVE Tx Sleep mode control of first stage of
14 GND DC and RF Ground
15 GND DC and RF Ground
16 PA IN RF input of the Power Amplifier
17 GND DC and RF Ground
18 V
19 GND DC and RF Ground
20 V
21 GND Second Stage DC and RF Ground
22 GND Second Stage DC and RF Ground
23 GND Second Stage DC and RF Ground
24 GND Second Stage DC and RF Ground
25 PA OUT RF output of the Power Amplifier
26 V
27 VSW T/R Switch Control, 0 V Tx mode/-4 V
28 GND DC and RF Ground
DD
G1
G2
DD2
1
-4 V Tx mode/0 V Rx mode
is connected to the antenna
Positive bias for the first stage of
PA, +2.7 to +6.0 volts
PA ONLY
0 V — first PA stage on
-4 V — first PA stage off
Negative bias control for the first PA
stage, voltage divider is on the MMIC,
adjusted to set V
current, which is typically 30 mA.
Input impedance: 10 kΩ
Negative bias control for the second
PA stage, adjusted to set V
quiescent bias current, which is
typically 65 mA.
Input impedance: > 1MΩ
Positive bias for the second stage of
the PA, +2.7 to +6.0 volts
Rx mode
quiescent bias
DD1
DD2
T ruth Table
Operating Mode VSW VSW SAVE Tx
PA Tx X X 0 V
PA Sleep X X -4.0 Volts
T/R Switch Tx 0 Volts -4.0 Volts X
T/R Switch Rx -4.0 Volts 0 Volts X
X - Don’t Care
Functional Diagram and Pin Configuration
GND
VSW
GND
Tx IN
GND
GND
ANT IN/OUT
GND
Rx OUT
GND
GND
V
DD1
SAVE Tx
GND
1
14 15
28
GND
VSW
V
V
DD2
DD1
PA OUT
GND
GND
GND
GND
V
V
G2
G1
GND
V
V
G1
G2
GND
PA IN
GND
Specifications Subject to Change Without Notice V 2.00
M/A-COM Inc. ■ 1011 Pawtucket Boulevard, Lowell, MA 01853 USA ■ Telephone: 800-366-2266
2
250 mW Linear Power Amplifier and T/R Switch AM55-0004
Po wer Amplifier Small Signal Performance
GAIN
27
6.0 V
24
21
6.0 V
3.6 V
3.0 V
4.8 V
GAIN (dB)
18
15
1.50 1.75 2.00 2.25 2.50
FREQUENCY (GHz)
INPUT MATCH
0
-5
-10
-15
-20
RETURN LOSS (dB)
-25
1.50 1.75 2.00 2.25 2.50
3.0 V
3.6 V
FREQUENCY (GHz)
4.8 V
1
Po wer Amplifier CWP erf ormance at1.9 GHz
POWER OUTPUT
28
26
24
22
POWER (dBm)
20
18
-5 -3 -1 1 3
P
(dBm)
IN
POWER ADDED EFFICIENCY (%)
45
35
3.6 V
25
PAE (%)
15
5
-5 -3 -1 1 3
3.0 V
P
(dBm)
IN
6.0 V
4.8 V
3.0 V
6.0 V
1
3.6 V
4.8 V
OUTPUT MATCH
0
-5
-10
-15
-20
RETURN LOSS (dB)
-25
1. All data measured at TA= +25°C and VG1, VG2adjusted for first stage quiescent current of 30 mA and second stage current of 65 mA,
respectively.
Specifications Subject to Change Without Notice V 2.00
6.0 V
4.8 V
3.0 V
3.6 V
1.50 1.75 2.00 2.25 2.50
FREQUENCY (GHz)
GAIN COMPRESSION
0
-1
-2
-3
-4
COMPRESSION (dB)
-5
-5 -3 -1 1 3
6.0 V
P
IN
4.8 V
3.0 V
3.6 V
(dBm)
M/A-COM Inc. ■ 1011 Pawtucket Boulevard, Lowell, MA 01853 USA ■ Telephone: 800-366-2266
3