MACOM AM42-0040 Datasheet

GaAs MMIC VSAT Power Amplif i er, 2W, 5.9-6.4 GHz AM42-0040

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AM42-0040

GaAs MMIC VSAT Power Amplifier, 2W

5.9 - 6.4 GHz

Features

• High Linear Gain: 30 dB Typ.

• High Saturated Output Power: +33 dBm Typ.

• High Power Added Efficiency: 26% Typ.

• 50Ω Input/Output Broadband Matched

• High Performance Ceramic Bolt Down Package

Description

M/A-COM’s AM42-0040 is a three-stage MMIC power
amplifier in a ceramic bolt down style hermetic package. The
AM42-0040 employs an internally matched monolithic chip
with internally decoupled Gate and Drain bias networks. The
AM42-0040 is designed to be operated from a constant current
Drain supply. By varying the Gate bias voltage, the saturated
output power performance of this device can be tailored for
various applications.

The AM42-0040 is designed for use as an output stage or
driver amplifier for C-band VSAT transmitter systems. This
amplifier employs a fully monolithic chip and requires a
minimum of external components.

M/A-COM’s AM42-0040 is fabricated using a mature 0.5
micron GaAs MESFET process. The process features full chip
passivation for increased performance and reliability. These
amplifiers are 100% RF tested to ensure compliance to
performance specifications.

CR-15

Notes: (unless otherwise specified)

1. Dimensions are in inches.

2. Tolerance: .XXX = ± 0.005
.XX = ± 0.010

Ordering Information

Part Number Package

AM42-0040 Ceramic Bolt Down Packa

e

Electrical Specifications:

TA = +25°C, VDD = +9V, VGG adjusted for IDD = 1050 mA, Frequency = 5.9 to 6.4 G Hz

Parameter Abbv. Test Conditions Units Min. Typ. Max.

≤

-10 dBm

Linear Gain G
Input VSWR
Output VSWR
Output Power P
Output Power vs. Frequency
Output Power vs. Temperature
(with respect to T

=+25°C)

A

Drain Bias Current I
Gate Bias Volta

eV
Gate Bias Current
Thermal Resistance
Second Harmonic f
Third Harmonic f

M/A-COM Division of AMP Incorporated ■ North America: Tel. [phone], Fax [phone] ■ Asia/Pacific: Tel.[phone], Fax [phone]

■

Europe: Tel. [phone], Fax+ 44 (1344) 300 020

www.macom.com

AMP and Connecting at a Higher Level are trademark s.

Specifications subject to change without notice.

VSWR

VSWR

SAT

P

SAT

P

SAT

DD

GG

Ι

GG

θ

JC

2
3

L

IN

OUT

P
P
P

P
P

P
P

P

P

=

+10 dBm, I

IN

=

+10 dBm, I

IN

=

+10 dBm, I

IN

T

=

+10 dBm, I

IN

=

+10 dBm, I

IN

IN

≤

-10 dBm

P

IN

≤

-10 dBm

IN

=1050 mA Typ.

DD

=1050 mA Typ.

DD

=1050 mA Typ.

DD

= -40°C to +70°C

A

=

+10 dBm

P

IN

=1050 mA Typ.

DD

=1050 mA Typ.

DD

dB 27 30 —

— — 2.3:1 2.7:1
— — 3.0:1 —

dBm 31.7 33.0 34.3

dB — 1.0 1.5
dB — ±0.4 —

mA 900 1050 1100

V -2.4 -1.2 -0.4

mA — 5 20

25°C Heat Sink °C/W — 5.6 —

=

+10 dBm, I

IN

=

+10 dBm, I

IN

=1050 mA Typ.

DD

=1050 mA Typ.

DD

dBc — -35 —
dBc — -45 —

V2.00

GaAs MMIC VSAT Power Amplif i er, 2W, 5.9-6.4 GHz AM42-0040

g

Absolute Maximum Ratings

1,2,3,4

Parameter Absolute Maximum

Input Power +23 dBm
V

DD

V

GG

V

- V

DD

GG

I

DD

+12 Volts

-3 Volts

12 Volts

1700 mA
Channel Temperature -40°C to +85°C
Stora

e Temperature -65°C to +150°C

1. Exceeding any one or a combination of these limits may cause
permanent damage.

2. Case Temperature (T

3. Nominal bias is obtained by first connec ting -2.4 volts t o pin 5
(V

), followed by connecting +9 volts to pin 10 (VDD). Note se-

GG

quence. Adjust V

4. RF ground and thermal interface is the flange (case bottom).
Adequate heat sinking is required.

5. No dc supply voltage will appear at the RF ports.

6. The dc resistance at the input and output ports is a short circuit.
No voltage is allowed on these ports.

7. For optimum IP
be placed within 0.5 inches of the V

) = +25°C.

C

for a drain current of 1050 mA typical.

GG

performance, the V

3

bypass capacitors should

DD

leads.

DD

3.3

4,5,6,7

µ

F

Typical Bias Configuration

V

DD

10

µ

0.01

3

AM42-0040

RF IN

2,4,7,9

GND

5

V

GG

1.0

F

µ

Pin Configuration

Pin No. Pin Name Description

1 N/C No Connection
2 GND DC and RF Ground
3 RF In RF Input
4 GND DC and RF Ground
5V

GG

6 N/C No Connection
7 GND DC and RF Ground
8 RF Out RF Output
9 GND DC and RF Ground

10 V

DD

Gate Supply

Drain Supply

F

8

RF OUT

M/A-COM Division of AMP Incorporated ■ North America: Tel. [phone], Fax [phone] ■ Asia/Pacific: Tel.[phone], Fax [phone]

■

Europe: Tel. [phone], Fax+ 44 (1344) 300 020

www.macom.com

AMP and Connecting at a Higher Level are trademark s.

Specifications subject to change without notice.

V2.00