MACOM AM42-0007 Datasheet

GaAs MMIC VSAT Power Amplifier 2.0W
14.0 - 14.5 GHz
AM42-0007
Features
High Linear Gain: 22 dB Typ.
High Saturated Output Power: +33 dBm Typ.
High Power Added Efficiency: 22% Typ.
High P
: 32 dBm Typ.
1dB
50=Input/Output Broadband Matched
Integrated Output Power Detector
High Performance Ceramic Bolt Down Package
Description
M/A-COM’s AM42-0007 is a three-stage MMIC linear power amplifier in a ceramic bolt down style hermetic package. The AM42-0007 employs a fully matched chip with internally decoupled Gate and Drain bias networks and an ouput power detector. The AM42-0007 is designed to be operated from a constant voltage Drain supply.
The AM42-0007 is designed for use as an output stage or a driver, in applications for VSAT systems. This design is fully monolithic and requires a minimum of external components.
M/A-COM’s AM42-0007 is fabricated using a mature 0.5 micron GaAs MESFET process. The process features full passivation for increased performance and reliability. This product is 100% RF tested to ensure compliance to performance specifications.
CR-15
.050 MIN. 10
X
.328 ± .010
.318 ± .010
.010 SQ .
ORIENTATION TAB
- A -
.115 ± .010
.030
- C -
.085
.050 4X
.005 ± .002
Notes: (unless otherwise specified)
1. Dimensions are in inches.
2. Tolerance: .XXX = ± 0.005 .XX = ± 0.010
.70 .530
8 9 10
6
7
.159
2X o .096 THRU
2 1
.33
5 4 3
.010 ± .003 10
X
.100 4X
CERAMIC
BASE PLATE
Ordering Information
Part Number Package
- B -
o.004 M A B C
4X .06 X 45°
CHAMFER
.090 MAX
.040
Electrical Specifications: T
= +25°C, VDD = +9V, VGG = -5.0V, Z0 = 50Ω,
C
Parameter Abbv. Test Conditions Units Min. Typ. Max.
Linear Gain G Input VSWR Output VSWR
Saturated Output Power P Output Power @
Output IP3 Power Added Efficiency Bias Currents I
Thermal Resistance Detector Output Voltage V
is measured with two +24 dBm output tones @ 1 MHz spacing.
IP
3
Specifications subject to change without notice.
North America: Tel. (800) 366-2266, Fax (800) 618-8883  Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298  Europe: Tel. +44 (1344) 869 595, Fax+ 44 (1 34 4) 30 0 020
Visit www.macom . com for ad di tional data sheets and pr o d uct i nf orm ation.
VSWR
VSWR
T
SAT
P
1dB
IP
PAE
GG
θ
JC det
L
IN
OU
3
P
0 dBm
IN
P
0 dBm
IN
P
0 dBm
IN
P
= +14 dBm
IN
— dBm 31 32
(Refer to Note 1) dBm 41
= +14 dBm
P
IN
P
= +14 dBm
IN
25°C Heat Sink °C/W 9.5
RL=10K, P
OUT
=+31dBm
Ω,====Frequency = 14.0-14.5 GHz
Ω,Ω,
dB 19 22
— — 2.5:1 2.7:1 — — 2.7:1 —
dBm — 33 —
% — 22 —
mA 18 25
V — +3.5 —
V 4.0
1
GaAs MMIC VSAT Power Amplifier 2.0W, 14.0 - 14.5 GHz
AM42-0007
Absolute Maximum Ratings
1,2,3,4
Parameter Absolute Maximum
V
DD
V
GG
12 Volts
-10 Volts Power Dissipation 13.2 W RF Input Power +23 dBm Channel Temperature 150°C Storage Temperature -65°C to +150°C I
ds
1. Operation of this device outside any of these limits may cause permanent damage.
2. Case Temperature (T
3. Nominal bias is obtained by first connecting -5 volts to pin 4 (V followed by connection +9 volts to pin 6 (V
4. RF ground and thermal interface is the flange (case bottom). Adequate heat sinking is required.
5. No dc bias voltage appears at the RF ports.
6. The dc resistance at the input port is an open circuit and at the ouput port is a short circuit.
7. For optimum IP be placed within 0.5 inches of pin 6.
) = +25°C.
C
performance, the V
3
DD
2100 mA
). Note sequence.
DD
bypass capacitors should
V
DD
3,4,7
3.3
µ F
Typical Bias Configuration
10 K
V
det
7 6
µ
F
0.01
),
GG
3
IN OUT
AM42-0007
GND 1,2,5,9,10 4
0.01
V
GG
µ F
8
Pin Configuration
Pin No. Pin Name Description
1 GND DC and RF Ground 2 GND DC and RF Ground 3 IN RF Input 4 V
GG
5 GND DC and RF Ground 6 V 7 V
DD det
8 OUT RF Output 9 GND
10 GND DC and RF Ground
Gate Supply
Voltage Drain Supply Output Power Detector
DC and RF Ground
Specifications subject to change without notice.
North America: Tel. (800) 366-2266, Fax (800) 618-8883  Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298  Europe: Tel. +44 (1344) 869 595, Fax+ 44 (1 34 4) 30 0 020
Visit www.macom . com for ad di tional data sheets and pr o d uct i nf orm ation.
V 4.0
2
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