· HIGH GAIN: 18.7 dB (TYP.)
· HIGH OUTPUT POWER: +20.5 dBm (TYP.)
· HIGH THIRD ORDER I.P.: +30 dBm (TYP.)
Specifications (Rev. Date: 12/00)*
* Measured in a 50-ohm system at +15 Vdc Nominal. Subject to change without notice.
Frequency
Small Signal Gain (min.)
Gain Flatness (max.)
Reverse Isolation
Noise Figure (max.)
Power Output @ 1 dB comp. (min.)
IP3
IP2
Second Order Harmonic IP
VSWR Input / Output (max.)
DC Current @ 15 Volts (max.)
0
°°°°
to 50
Guaranteed Characteristics Typical
°°°°
C -54
°°°°
to +85
Typical Performance @ 25°C
°°°°
C
Absolute Maximum Ratings
Storage Temperature
Max. Case Temperature
Max. DC Voltage
Max. Continuous RF Input Power
Max. Short Term RF Input Power (1 minute max.)
Max. Peak Power (3 µsec max.)
“S” Series Burn-in Temperature (Case)
Thermal Data: Vcc = 15 Vdc
Thermal Resistance
Transistor Power Dissipation P
Junction Temperature Rise Above Case T
θ
jc
d
jc
Outline Drawings
Package TO-8 Surface Mount SMA Connectorized
Figure
Model
Specifications subject to change without notice. • North America: 1-800-366-2266
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