LRC MSD602-RT1 Datasheet
LESHAN RADIO COMPANY, LTD.
NPN General Purpose Amplifier
Transistor Surface Mount
COLLECTOR
3
MSD602–RT1
3
2
1
2 1
BASE EMITTER
MAXIMUM RATINGS (T
Rating Symbol Value Unit
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current–Continuous I
Collector Current–Peak I
= 25°C)
A
(BR)CBO
(BR)CEO
(BR)EBO
C
C(P)
60 Vdc
50 Vdc
7.0 Vdc
500 mAdc
1.0 Adc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Power Dissipation P
Junction Temperature T
Storage Temperature T
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (I C = 10 mAdc, I B = 0) V
Collector-Base Breakdown Voltage (I C = 10 µAdc, I E = 0) V
Emitter-Base Breakdown Voltage (I E = 10 µAdc, I C = 0) V
Collector-Base Cutoff Current (V CB = 20Vdc, I E = 0) I
DC Current Gain
(V
= 10 Vdc, I
CE
(V CE = 10 Vdc, I C = 500 mAdc) h
Collector-Emitter Saturation Voltage (I C = 300 mAdc, I B = 30 mAdc) V
Output Capacitance(VCB=10Vdc,IE=0,f=1.0MHz) C
1. Pulse Test: Pulse Width < 300 µs, D.C < 2%.
(1)
= 150 mAdc) h
C
= 25°C)
A
D
J
stg
200 mW
150 °C
–55 ~ +150 °C
(BR)CEO
(BR)CBO
(BR)EBO
CBO
FE1
FE2
CE(sat)
ob
CASE 318D–03, STYLE1
SC–59
50 — Vdc
60 — Vdc
7.0 — Vdc
— 0.1 µAdc
—
120 240
40 —
— 0.6 Vdc
—15pF
DEVICE MARKING
Marking Symbol
WR
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
X
N7–1/1
Loading...