NPN RF Amplifier T ransistor
Surface Mount
LESHAN RADIO COMPANY, LTD.
MAXIMUM RATINGS (T
Rating Symbol Value Unit
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current - Continuous I
= 25 °C)
A
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Power Dissipation P
Junction Temperature T
Storage Temperature T
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Max Unit
Collector Cutoff Current
(V CB = 10 Vdc, I E = 0)
Collector-Emitter Breakdown Voltage
(I C = 2.0 mAdc, I B = 0)
Emitter-Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
DC Current Gain
(V CE = 4.0 Vdc, I C = 5.0 mAdc)
Collector-Emitter Saturation Voltage
(I C = 20 mAdc, I B = 4.0 mAdc)
Current-Gain–Bandwidth Produc
(V CB = 4.0 Vdc, I E = -5.0 mAdc)
1. Pulse Test: Pulse Width < 300 µs, D.C.<2%.
(1)
= 25 °C)
A
DEVICE MARKING
COLLECTOR
3
2 1
BASE EMITTER
CBO
CEO
EBO
C
D
J
stg
3.0 Vdc
200 mW
150 °C
–55 ~ +150 °C
I
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
tf
T
MSC3130T1
3
2
1
CASE 318D–03, STYLE 1
SC–59
15 Vdc
10 Vdc
50 mAdc
— 1.0 µAdc
10 — Vdc
3.0 — Vdc
75 400 —
— 0.5 Vdc
1.4 2.5 GHz
Marking Symbol
The “X” represents a smaller alpha digit Date Code. The Date Code
indicates the actual month in which the part was manufactured.
1S
X
N5–1/1