LESHAN RADIO COMPANY, LTD.
NPN RF Amplifier Transistors
Surface Mount
MSC2295-BT1
COLLECTOR
3
2 1
BASE EMITTER
MAXIMUM RA TINGS (T
Rating Symbol Value Unit
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current - Continuous I
= 25°C)
A
(BR)CBO
(BR)CEO
(BR)EBO
C
30 Vdc
20 Vdc
5.0 Vdc
30 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Power Dissipation P
Junction Temperature T
Storage Temperature T
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Max Unit
Collector-Base Cutoff Current I
(V CB = 10 Vdc, I E = 0)
DC Current Gain
(V CB = 10 Vdc, I C = –1.0 mAdc) MSC2295-BT1 70 140
Collector-Gain - Bandwidth Product f
(V CB = 10 Vdc, I E = –1.0 mAdc)
Reverse Transistor Capacitance C
(V
= 10 Vdc, I C = 1.0 mAdc, f = 10.7 MHz)
CE
(1)
D
J
stg
= 25°C)
A
MSC2295-CT1 110 220
200 mW
150 °C
-55 ~ +150 °C
CBO
h
FE
T
re
MSC2295-CT1
CASE 318D–03, STYLE1
— 0.1 µAdc
150 — MHz
— 1.5 pF
3
2
1
SC–59
—
1. Pulse Test: Pulse Width < 300 ms, D.C.< 2%.
DEVICE MARKING
Marking Symbol
VB
MSC2295-BT1
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
X
VC
MSC2295-CT1
X
N4–1/1