LRC MSC2295-BT1, MSC2295-CT1 Datasheet

LESHAN RADIO COMPANY, LTD.
NPN RF Amplifier Transistors Surface Mount
MSC2295-BT1
COLLECTOR 3
2 1 BASE EMITTER
MAXIMUM RA TINGS (T
Rating Symbol Value Unit
Collector-Base Voltage V Collector-Emitter Voltage V Emitter-Base Voltage V Collector Current - Continuous I
= 25°C)
A
(BR)CBO
(BR)CEO
(BR)EBO
C
5.0 Vdc 30 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Power Dissipation P Junction Temperature T Storage Temperature T
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Max Unit
Collector-Base Cutoff Current I (V CB = 10 Vdc, I E = 0) DC Current Gain (V CB = 10 Vdc, I C = –1.0 mAdc) MSC2295-BT1 70 140
Collector-Gain - Bandwidth Product f (V CB = 10 Vdc, I E = –1.0 mAdc) Reverse Transistor Capacitance C (V
= 10 Vdc, I C = 1.0 mAdc, f = 10.7 MHz)
CE
(1)
D
J
stg
= 25°C)
A
MSC2295-CT1 110 220
200 mW 150 °C
-55 ~ +150 °C
CBO
h
FE
T
re
MSC2295-CT1
CASE 318D–03, STYLE1
0.1 µAdc
150 MHz
1.5 pF
3
2
1
SC–59
1. Pulse Test: Pulse Width < 300 ms, D.C.< 2%.
DEVICE MARKING
Marking Symbol
VB
MSC2295-BT1
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
X
VC
MSC2295-CT1
X
N4–1/1
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