LRC MSB709-RT1 Datasheet
PNP General Purpose Amplifier
T ransistor Surface Mount
LESHAN RADIO COMPANY, LTD.
COLLECTOR
3
2 1
BASE EMITTER
MAXIMUM RATINGS (T
Rating Symbol Value Unit
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current - Continuous I
Collector Current - Peak I
= 25 °C)
A
(BR)CBO
(BR)CEO
(BR)EBO
C
C(P)
–60 Vdc
–45 Vdc
–7.0 Vdc
–100 mAdc
–200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Power Dissipation P
Junction Temperature T
Storage Temperature T
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC=–2.0mAdc,IB=0) V
Collector-Base Breakdown Voltage (IC=–10µAdc,IE=0) V
Emitter-Base Breakdown Voltage (IE =–10µAdc,IE=0) V
Collector-Base Cutoff Current (VCB =–45Vdc, IE=0) I
Collector-Emitter Cutoff Current (VCE=–10Vdc, IB=0) I
DC Current Gain
(VCE=–10Vdc, IC = –2.0mAdc)
Collector-Emitter Saturation Voltage
(IC = –100mAdc, IB=–10mAdc)
(1)
= 25 °C)
A
D
J
stg
200 mW
150 °C
–55 ~ +150 °C
(BR)CEO
(BR)CBO
(BR)EBO
CBO
CEO
h
FE1
V
CE(sat)
MSB709-RT1
3
2
1
CASE 318D–03, STYLE1
SC–59
–45 — Vdc
–60 — Vdc
–7.0 — V dc
— –0.1 µAdc
— –100 nAdc
210 340 —
— –0.5 Vdc
1. Pulse Test: Pulse Width 300 µs, D.C. 2%.
<
<
DEVICE MARKING
Marking Symbol
AR
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
X
N2–1/1
Loading...