LRC MMVL809T1 Datasheet
Silicon Tuning Diode
LESHAN RADIO COMPANY, LTD.
MMVL809T1
This device is designed for 900 MHz frequency control and tuning
applications. It provides solid–state reliability in replacement of mechanical
tuning methods.
• Controlled and Uniform Tuning Ratio
• Surface Mount Package
• Available in 8 mm Tape and Reel
• Device Marking: 5K
1
CA THODE
ORDERING INFORMATION
Device Package Shipping
MMVL809T1 SOD–323 3000 / Tape & Reel
MAXIMUM RA TINGS
Symbol Rating Value Unit
V
R
I
F
Continuous Reverse Voltage 20 Vdc
Peak Forward Current 20 mAdc
THERMAL CHARACTERISTICS
Symbol Characteristic Max Unit
P
D
R
θJA
TJ, T
*FR–4 Minimum Pad
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
Reverse BreakdownVoltage V
(IR = 10 µAdc)
Reverse Voltage Leakage Current I
(VR = 15 Vdc)
Total Device Dissipation FR–5 Board,* 200 mW
TA = 25°C
Derate above 25°C 1.57 mW/°C
Thermal Resistance Junction to Ambient 635 °C/W
stg
Junction and Storage Temperature 150 °C
= 25°C unless otherwise noted)
A
(BR)R
R
2
ANODE
20 — — Vdc
— — 50 nAdc
4.5 – 6.1 pF
VOL T AGE V ARIABLE
CAPACITANCE DIODE
1
2
PLASTIC, CASE 477
SOD– 323
Ct, Diode Capacitance Q, Figure of Merit CR, Capacitance Ratio
VR = 2.0 Vdc, f = 1.0 MHz VR = 3.0 Vdc C3/C
pF f = 500 MHz f = 1.0 MHz(1)
Device Mi n No m Max Mi n Mi n Max
MMVL809T1 4.5 5.3 6.1 75 1.8 2.6
1. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 Vdc.
8
MMVL809T1–1/2
10
1000
, DIODE CAPACITANCE (pF)
T
C
TYPICAL CHARACTERISTICS
9
8
7
6
5
4
3
2
1
0
11015
4
VR, REVERSE VOLTAGE (VOLTS)
823 50.5
100
Q, FIGURE OF MERIT
LESHAN RADIO COMPANY, LTD.
MMVL809T1
VR = 3 Vdc
TA = 25°C
10
0.1
1.0 10
f, FREQUENCY (GHz)
Figure 1. Diode Capacitance
1000
VR = 3.0 Vdc
0
f = 1.0 MHz
0.2 0.6 1.0
0.4 0.8 1.2
f, FREQUENCY (GHz)
800
600
, SERIES RESISTANCE (MHz)
S
R
400
1.04
1.03
1.02
1.01
1.00
0.99
0.98
, DIODE CAPACITANCE (NORMALIZED)
0.97
T
C
0.96
–75
VR = 3.0 Vdc
f = 1.0 MHz
–50 0 +50 +100
Figure 3. Series Resistance
Figure 2. Figure of Merit
–25 +25 +75 +125
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Diode Capacitance
MMVL809T1–2/2
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