LRC MMVL409T1 Datasheet
LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
These devices are designed for general frequency control and tuning
applications. They provide solid–state reliability in replacement of mechanical
tuning methods.
MMVL409T1
VOLTAGE VARIABLE
CAPACIT ANCE DIODE
• High Q with Guaranteed Minimum V alues at VHF Frequencies
• Controlled and Uniform Tuning Ratio
• Surface Mount Package
• Device Marking: X5
1
CA THODE
ORDERING INFORMA TION
Device Package Shipping
MMVL409T1 SOD–323 3000 / Tape & Reel
MAXIMUM RA TINGS
Symbol Rating Value Unit
V
R
I
F
THERMAL CHARACTERISTICS
Symbol Characteristic Max Unit
P
D
R
θJA
TJ, T
stg
*FR–4 Minimum Pad
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
Reverse BreakdownVoltage V
(IR = 10 µAdc)
Reverse Voltage Leakage Current I
(VR = 15 Vdc)
Diode Capacitance Temperature Coefficient TC
(VR = 3.0 Vdc, f = 1.0 MHz)
Continuous Reverse Voltage 20 Vdc
Peak Forward Current 200 mAdc
Total Device Dissipation FR–5 Board,* 200 mW
TA = 25°C
Derate above 25°C 1.57 mW/°C
Thermal Resistance Junction to Ambient 635 °C/W
Junction and Storage Temperature 150 °C
= 25°C unless otherwise noted)
A
(BR)R
R
C
1
2
ANODE
20 — — Vdc
— — 0.1 µAdc
— 300 — ppm/°C
PLASTIC, CASE 477
SOD– 323
2
Ct, Diode Capacitance Q, Figure of Merit CR, Capacitance Ratio
VR = 3.0 Vdc, f = 1.0 MHz VR = 3.0 Vdc C3/C
pF f = 50 MHz f = 1.0 MHz(1)
Device Mi n No m Max Mi n Mi n Max
MMVL409T1 26 29 32 200 1.5 1.9
1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc.
8
MMVL409T1–1/2
LESHAN RADIO COMPANY, LTD.
TYPICAL CHARACTERISTICS
MMVL409T1
, DIODE CAP ACITANCE (pF)
T
C
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
, REVERSE CURRENT (nA)
R
I
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Leakage Current
Q, FIGURE OF MERIT
, DIODE CAPACIT ANCE (NORMALIZED)
t
C
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Diode Capacitance
f, FREQUENCY (MHz)
Figure 2. Figure of Merit
MMVL409T1–2/2
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