LRC MMVL3700T1 Datasheet
High Voltage Silicon Pin
LESHAN RADIO COMPANY, LTD.
Diode
These devices are designed primarily for VHF band switching applications but
are also suitable for use in general–purpose switching circuits. They are supplied
in a cost–effective plastic surface mount package for economical, high–volume
consumer and industrial requirements.
• Long Reverse Recovery Time trr = 300 ns (Typ)
• Rugged PIN Structure Coupled with Wirebond
Construction for Optimum Reliability
• Low Series Resistance @ 100 MHz –
R
= 0.7 Ω (Typ) @ IF = 10 mAdc
S
• Reverse Breakdown Voltage = 200 V (Min)
• Device Marking: 4R
ORDERING INFORMA TION
Device Package Shipping
MMVL3700T1 SOD–323 3000 / Tape & Reel
MMVL3700T1
SILICON PIN
SWITCHING DIODE
1
PLASTIC, CASE 477
SOD– 323
1
CA THODE
2
2
ANODE
MAXIMUM RA TINGS
Symbol Rating Value Unit
V
R
I
F
Continuous Reverse Voltage 200 Vdc
Peak Forward Current 20 mAdc
THERMAL CHARACTERISTICS
Symbol Characteristic Max Unit
P
D
R
θJA
TJ, T
*FR–4 Minimum Pad
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
Reverse BreakdownVoltage V
(IR = 10 µAdc)
Diode Capacitance C
(VR = 20 Vdc, f = 1.0 MHz)
Series Resistance R
(IF = 10 mAdc)
Reverse Leakage Current I
(VR = 150 Vdc)
Reverse Recovery Time t
(IF = IR = 10 mAdc)
Total Device Dissipation FR–5 Board,* 200 mW
TA = 25°C
Derate above 25°C 1.57 mW/°C
Thermal Resistance Junction to Ambient 635 °C/W
stg
Junction and Storage Temperature 150 °C
= 25°C unless otherwise noted)
A
(BR)R
T
S
R
rr
200 — — Vdc
— — 1.0 pF
— 0.7 1.0 Ω
— — 0.1 µAdc
— 300 — ns
MMVL3700T1–1/2
LESHAN RADIO COMPANY, LTD.
MMVL3700T1
TYPICAL CHARACTERISTICS
, SERIES RESIST ANCE (Ω)
S
R
, FORWARD CURRENT (mA)
F
I
, DIODE CAP ACITANCE (pF)
T
C
I F, FORWARD CURRENT (mA)
Figure 1. Series Resistance
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
REVERSE CURRENT (µ A)
I
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
R,
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Leakage Current
MMVL3700T1–2/2
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