LRC MMVL3401T1 Datasheet
LESHAN RADIO COMPANY, LTD.
Silicon Pin Diode
This device is designed primarily for VHF band switching applications but is also
suitable for use in general–purpose switching circuits. Supplied in a Surface Mount
package.
• Rugged PIN Structure Coupled with Wirebond Construction
for Optimum Reliability
• Low Capacitance – 0.7 pF T yp at V
• Very Low Series Resistance at 100 MHz – 0.34 Ohms (Typ)
@ I
= 10 mAdc
F
• Device Marking: 4D
= 20 Vdc
R
MMVL3401T1
SILICON PIN
SWITCHING DIODE
1
2
PLASTIC, CASE 477
SOD– 323
ORDERING INFORMA TION
Device Package Shipping
MMVL3401T1 SOD–323 3000 / Tape & Reel
MAXIMUM RA TINGS
Symbol Rating Value Unit
V
R
I
F
Continuous Reverse Voltage 20 Vdc
Peak Forward Current 20 mAdc
THERMAL CHARACTERISTICS
Symbol Characteristic Max Unit
P
D
R
θJA
TJ, T
*FR–4 Minimum Pad
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
Reverse BreakdownVoltage V
(IR = 10 µAdc)
Diode Capacitance C
(VR = 20 Vdc)
Series Resistance R
(IF = 10 mAdc, f =100MHz)
Reverse Leakage Current I
(VR = 25 Vdc)
Total Device Dissipation FR–5 Board,* 200 mW
TA = 25°C
Derate above 25°C 1.57 mW/°C
Thermal Resistance Junction to Ambient 635 °C/W
stg
Junction and Storage Temperature 150 °C
= 25°C unless otherwise noted)
A
(BR)R
T
S
R
1
CA THODE
35 — — Vdc
— — 1.0 pF
— – 0.7 Ω
— — 0.1 µAdc
2
ANODE
MMVL3401T1–1/2
LESHAN RADIO COMPANY, LTD.
MMVL3401T1
TYPICAL CHARACTERISTICS
, SERIES RESIST ANCE (Ω)
S
R
, FORWARD CURRENT (mA)
F
I
, DIODE CAP ACITANCE (pF)
T
C
I F, FORWARD CURRENT (mA)
Figure 1. Series Resistance
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
REVERSE CURRENT (µ A)
I
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
R,
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Leakage Current
MMVL3401T1–2/2
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