LRC MMVL3102T1 Datasheet

Silicon Tuning Diode

LESHAN RADIO COMPANY, LTD.

MMVL3102T1

This device is designed in the Surface Mount package for general
frequency control and tuning applications. It provides solid–state reliability
in replacement of mechanical tuning methods.

• High Q with Guaranteed Minimum V alues at VHF Frequencies

• Controlled and Uniform Tuning Ratio

• Device Marking: 4C

1
CA THODE

ORDERING INFORMA TION

Device Package Shipping

MMVL3102T1 SOD–323 3000 / Tape & Reel

MAXIMUM RA TINGS

Symbol Rating Value Unit

V

R

I

F

Continuous Reverse Voltage 30 Vdc

Peak Forward Current 200 mAdc

THERMAL CHARACTERISTICS

Symbol Characteristic Max Unit

P

D

R

θJA

TJ, T

*FR–4 Minimum Pad

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

Reverse BreakdownVoltage V
(IR = 10 µAdc)
Reverse Voltage Leakage Current I

(V

= 25 Vdc, TA = 25°C)

R

Total Device Dissipation FR–5 Board,* 200 mW

TA = 25°C
Derate above 25°C 1.57 mW/°C

Thermal Resistance Junction to Ambient 635 °C/W

stg

Junction and Storage Temperature 150 °C

= 25°C unless otherwise noted)

A

Diode Capacitance Temperature Coefficient TC
(VR = 4.0 Vdc, f = 1.0 MHz)

2
ANODE

(BR)R

R

C

30 — — Vdc

— — 0.1 µAdc

— 300 — ppm/°C

22 pF (Nominal) 30 VOLT S

VOLTAGE VARIABLE

CAPACIT ANCE DIODE

1

2

PLASTIC, CASE 477

SOD– 323

Ct, Diode Capacitance Q, Figure of Merit CR, Capacitance Ratio

VR = 3.0 Vdc, f = 1.0 MHz VR = 3.0 Vdc C3/C

pF f = 50 MHz f = 1.0 MHz

Device Mi n No m Max Mi n Mi n Max

MMVL3102T1 20 22 25 200 4.5 4.8

25

MMVL3102T1–1/2

LESHAN RADIO COMPANY, LTD.

TYPICAL CHARACTERISTICS

MMVL3102T1

40

36

32

28

24

20

16

12

, DIODE CAPACITANCE (pF)

T

C

8.0

4.0

0

0.3 1.0 10 20 30

f = 1.0 MHz
T

= 25°C

A

0.5 2.0 3.0 5.0

, REVERSE VOLTAGE (VOLTS)

V

R

Figure 1. Diode Capacitance Figure 2. Figure of Merit

100

10

VR = 20 Vdc

1.0

0.1

, REVERSE CURRENT (nA)

R

I

0.01

0.001

-60

0 +100

T

, AMBIENT TEMPERATURE (°C)

A

Q, FIGURE OF MERIT (x 1000)

, DIODE CAPACITANCE (NORMALIZED)
C

+140+60+20-20

20

T

= 25°C

A

f = 50 MHz

10

5.0

3.0

2.0

1.0

0.5

0.3

0.2
0

3.0 186.0 219.0 2412 27

VR, REVERSE VOLTAGE (VOLTS)

1.04

1.03

1.02

1.01

1.00

0.99

0.98

T

0.97

0.96

VR = 3.0 Vdc

f = 1.0 MHz

-75

-25 +25 +75 +125

-50 0 +50 +100

T

, AMBIENT TEMPERATURE (°C)

A

15 30

Figure 3. Leakage Current

NOTES ON TESTING AND SPECIFICATIONS

1. CR is the ratio of CT measured at 3.0 Vdc divided by CT measured at 25 Vdc.

Figure 4. Diode Capacitance

MMVL3102T1–2/2