LRC MMVL2101T1 Datasheet
LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
These devices are designed in the popular Plastic Surface Mount
Package for high volume requirements of FM Radio and TV tuning and
AFC, general frequency control and tuning applications.They provide
solid–state reliability in replacement of mechanical tuning methods.
MMVL2101T1
30 VOLTS
VOLTAGE VARIABLE
CAPACIT ANCE DIODE
• High Q
• Controlled and Uniform Tuning Ratio
• Standard Capacitance Tolerance – 10%
• Complete T ypical Design Curves
• Device Marking: 4G
ORDERING INFORMATION
Device Package Shipping
MMVL2101T1 SOD–323 3000 / Tape & Reel
MAXIMUM RA TINGS
Symbol Rating Value Unit
V
R
I
F
THERMAL CHARACTERISTICS
Symbol Characteristic Max Unit
P
D
R
θJA
TJ, T
stg
*FR–4 Minimum Pad
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
Reverse BreakdownVoltage V
(IR = 10 µAdc)
Reverse Voltage Leakage Current I
(V
= 25 Vdc, TA = 25°C)
R
Diode Capacitance Temperature Coefficient TC
(VR = 4.0 Vdc, f = 1.0 MHz)
Continuous Reverse Voltage 30 Vdc
Peak Forward Current 200 mAdc
Total Device Dissipation FR–5 Board,* 200 mW
TA = 25°C
Derate above 25°C 1.57 mW/°C
Thermal Resistance Junction to Ambient 635 °C/W
Junction and Storage Temperature 150 °C
= 25°C unless otherwise noted)
A
(BR)R
R
C
1
PLASTIC, CASE 477
SOD– 323
1
CATHODE
30 — — Vdc
— — 0.1 µAdc
— 280 — ppm/°C
2
2
ANODE
Device Mi n No m Max Mi n Mi n Max
MMVL2101T1 6.1 6.8 7.5450 2.5 2.7 3.2
1. CT, DIODE CAPACIT ANCE
= CC + CJ). CT is measured at 1.0
(C
T
MHz using a capacitance bridge
(Boonton Electronics Model 75A or
equivalent).
2. TR, TUNING RATIO
TR is the ratio of C
Vdc divided by C
measured at 2.0
T
measured at 30 Vdc.
T
Ct, Diode Capacitance Q, Figure of Merit TR, Tuning Ratio
VR = 4.0 Vdc, f = 1.0 MHz VR = 4.0 Vdc C2/C
30
pF f = 50 MHz f = 1.0 MHz
PARAMETER TEST METHODS
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C
readings of an admittance bridge at the
specified frequency and substituting in the
following equations:
Q =2πfC/G
(Boonton Electronics Model 33AS8 or
equivalent). Use Lead Length = 1/16”.
, DIODE CAPACIT ANCE TEMPERA TURE COEFFICIENT
4. TC
C
is guaranteed by comparing CT at VR = 4.0 Vdc,
TC
C
f = 1.0 MHz, T
1.0 MHz, T
defines TC
TCC =
Accuracy limited by measurement of C
= –65°C with CT at VR = 4.0 Vdc, f =
A
= +85°C in the following equation, which
A
:
C
C
(+85°C) – CT(–65°C)
T
85+65 CT(25°C)
10
•
MMVL2101T1–1/2
6
to ±0.1 pF.
T
, DIODE CAP ACITANCE (pF)
T
C
LESHAN RADIO COMPANY, LTD.
MMVL2101T1
TYPICAL DEVICE CHARACTERISTICS
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance versus Reverse V oltage
NORMALIZED DIODE CAPACITANCE
TJ, JUNCTION TEMPERA TURE (°C)
Figure 2. Normalized Diode Capacitance versus
Junction Temperature
Q, FIGURE OF MERIT
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Figure of Merit versus Reverse Voltage
, REVERSE CURRENT (nA)
R
I
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Current versus Reverse Bias
Voltage
Q, FIGURE OF MERIT
f, FREQUENCY (MHz)
Figure 5. Figure of Merit versus Frequency
MMVL2101T1–2/2
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