LRC MMVL109T1 Datasheet

Silicon Epicap Diode

LESHAN RADIO COMPANY, LTD.

MMVL109T1

Designed for general frequency control and tuning applications;
providing solid–state reliability in replacement of mechnaical tuning
methods.

• High Q with Guaranteed Minimum V alues at VHF Frequencies

• Controlled and Uniform Tuning Ratio

• Surface Mount Package

• Device Marking: 4A

ORDERING INFORMA TION

Device Package Shipping

MMVL109T1 SOD–323 3000 / Tape & Reel

MAXIMUM RA TINGS

Symbol Rating Value Unit

V

R

I

F

THERMAL CHARACTERISTICS

Symbol Characteristic Max Unit

P

D

R

θJA

TJ, T

stg

*FR–5 Minimum Pad

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

Reverse BreakdownVoltage V
(IR = 10 µAdc)
Reverse Voltage Leakage Current I

(V

= 25 Vdc)

R

Diode Capacitance Temperature Coefficient TC
(VR = 3.0 Vdc, f = 1.0 MHz)

Continuous Reverse Voltage 30 Vdc

Peak Forward Current 200 mAdc

Total Device Dissipation FR–5 Board,* 200 mW

TA = 25°C
Derate above 25°C 1.57 mW/°C

Thermal Resistance Junction to Ambient 635 °C/W

Junction and Storage Temperature Range -55 to +150 °C

= 25°C unless otherwise noted)

A

(BR)R

R

C

26–32 pF

VOLTAGE VARIABLE

CAPACIT ANCE DIODES

1

PLASTIC, CASE 477

SOD– 323

1
CA THODE

30 — — Vdc

— — 0.1 µAdc

— 300 — ppm/°C

2

2
ANODE

Ct, Diode Capacitance Q, Figure of Merit CR, Capacitance Ratio

VR = 3.0 Vdc, f = 1.0 MHz VR = 3.0 Vdc C3/C

pF f = 50 MHz f = 1.0 MHz(Note 1)

Device Mi n No m M ax Mi n Mi n Max

MMVL109T1 26 29 32 200 5.0 6.5

1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 25 Vdc.

25

MMVL109T1–1/2

TYPICAL CHARACTERISTICS

40

C

,

CA

ACITANCE

1000

,

REVER

E

C

RRENT

A)

I

36
32

28

– pF

24
20

P

16

T

12

8
4
0

1 3 10 30 100

VR, REVERSE VOLTAGE (VOLTS)

f = 1.0 MHz
TA = 25°C

LESHAN RADIO COMPANY, LTD.

100

Q, FIGURE OF MERIT

10

10

MMVL109T1

VR = 3 Vdc
TA = 25°C

100 1000

f, FREQUENCY (MHz)

Figure 1. DIODE CAPACITANCE

100

60
20

10

(n

U
S

R

6.0

2.0

1.0

0.6

0.2

0.1

0.06

0.02

0.01

0.006

0.002

0.001
–60

VR = 20 Vdc

0 +40 +100

TA, AMBIENT TEMPERATURE

1.04

1.03

1.02

1.01

1.00

0.99

0.98

, DIODE CAPACITANCE (NORMALIZED)

t

0.97

C

0.96

+120 +140+80+60+20–40 –20

–75

Figure 3. LEAKAGE CURRENT

Figure 2. FIGURE OF MERIT

VR = 3.0 Vdc

f = 1.0 MHz

Ct [ Cc + C

–50 0 +50 +100

j

–25 +25 +75 +125

TA, AMBIENT TEMPERATURE

Figure 4. DIODE CAPACITANCE

NOTES ON TESTING AND SPECIFICATIONS

1. CR is the ratio of Ct measured at 3.0 Vdc divided by Ct measured at 25 Vdc.

MMVL109T1–2/2