LRC MMVL105GT1 Datasheet

Silicon Tuning Diode

LESHAN RADIO COMPANY, LTD.

MMVL105GT1

This device is designed in the Surface Mount package for general frequency
control and tuning applications. It provides solid–state reliability in replacement
of mechanical tuning methods.

• Controlled and Uniform Tuning Ratio

• Device Marking: M4E

ORDERING INFORMATION

Device Package

MMVL105GT1 SOD–323 3000 / Tape & Reel

MAXIMUM RATINGS

Symbol Rating Value Unit

V

R

I

F

THERMAL CHARACTERISTICS

Symbol Characteristic Max Unit

P

D

R

θJA

T

J, Tstg

*FR–4 Minimum Pad

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

Reverse BreakdownVoltage V
(IR = 10 µAdc)
Reverse Voltage Leakage Current I
(VR = 28 Vdc)

Continuous Reverse Voltage 30 Vdc

Peak Forward Current 200 mAdc

Total Device Dissipation FR -5 Board,* 200 mW

TA = 25°C
Derate above 25°C 1.57 mW/°C

Themal Resistance Junction toAmbient 635 °C/W

Junction and Storage Temperature 150 °C

Shipping

(BR)R

R

30 — Vdc

— 50 nAdc

30 VOLT

VOLTAGE VARIABLE

CAPACIT ANCE DIODES

1

PLASTIC, CASE 477

SOD– 323

1
CA THODE

2

2
ANODE

C

Q CR,

t

VR = 25 Vdc, f = 1.0 MHz VR = 3.0 Vdc C3/C

pF f = 50 MHz f = 1.0 MHz

Device Type Min Max Typ Min Max

MMVL105T1 1.5 2.8 250 4.0 6.5

25

MMVL105GT1–1/2

LESHAN RADIO COMPANY, LTD.

TYPICAL CHARACTERISTICS

MMVL105GT1

20
18

16
14
12
10

8.0

6.0

, DIODE CAPACITANCE (pF)

T

C

4.0

2.0
0

0.3 1.0 10 20 30

f = 1.0 MHz
T

= 25°C

A

0.5 2.0 3.0 5.0
V

, REVERSE VOLTAGE (VOLTS)

R

Figure 1. Diode Capacitance

1.04

1.03

1.02

1.01

1.00

0.99

VR = 3.0 Vdc

f = 1.0 MHz

1000

100

Q, FIGURE OF MERIT

10

10

VR = 3 Vdc
T

= 25°C

A

100 1000

f, FREQUENCY (MHz)

Figure 2. Figure of Merit

0.98

, DIODE CAPACITANCE (NORMALIZED)

0.97

T

C

0.96
–75

–25 +25 +75 +125

–50 0 +50 +100

TA, AMBIENT TEMPERATURE (°C)

Figure 3. Diode Capacitance

MMVL105GT1–2/2