LRC MMUN2213RLT1, MMUN2233RL34, MMUN2211RLT1, MMUN2215RLT1, MMUN2232RLT1 Datasheet
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LESHAN RADIO COMPANY, LTD.
Bias Resistor T ransistor
MMUN2211RLT1
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base-emitter resistor.The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-23 package which is
designed for low power surface mount applications.
∗ Simplifies Circuit Design
∗ Reduces Board Space
∗ Reduces Component Count
∗ The SOT-23 package can be soldered using wave or
reflow. The modified gull-winged leads absorb thermal
stress during soldering eliminating the possibility of
damage to the die.
∗ Available in 8 mm embossed tape and reel. Use the
Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (T
PIN1
base
(Input)
= 25°C unless otherwise noted)
A
R1
R2
Rating Symbol Value Unit
Collector-Base Voltage V
Collector-Emitter Voltage V
Collector Current I
Total Power Dissipation @ T A = 25°C
(1)
Derate above 25°C 1.6 mW/°C
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Resistance — Junction-to-Ambient (surface mounted) R
Operating and Storage Temperature Range TJ , T
Maximum Temperature for Soldering Purposes
Time in Solder Bath 10 Sec
DEVICE MARKING AND RESISTOR VALUES
Device Marking R1 (K) R2 (K)
MMUN2211RLT1 A8A 10 10
MMUN2212RLT1 A8B 22 22
MMUN2213RLT1 A8C 47 47
MMUN2214RLT1 A8D 10 47
MMUN2215RLT1
MMUN2216RLT1
MMUN2230RLT1
MMUN2231RLT1
MMUN2232RLT1
MMUN2233RLT1
MMUN2234RLT1
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
(2)
(2)
(2)
(2)
(2)
(2)
(2)
A8E 10
A8F 4.7
A8G 1 1
A8H 2.2 2.2
A8J 4.7 4.7
A8K 4.7 47
A8L 22 47
PIN3
Collector
(output)
PIN2
Emitter
(Ground)
CBO
CEO
C
P
θJA
T
D
stg
L
MMUN2212RLT1
MMUN2213RLT1
MMUN2214RLT1
MMUN2215RLT1
MMUN2230RLT1
MMUN2231RLT1
MMUN2232RLT1
MMUN2233RL34
BIAS RESISTOR
1
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
50 Vdc
50 Vdc
100 mAdc
200 mW
625 °C/W
–65 to +150 °C
260 °C
NPN SILICON
TRANSISTOR
3
2
88
Q2–1/8
LESHAN RADIO COMPANY, LTD.
MMUN2211RLT1 SERIES
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB=50V, I E = 0) I
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) I
Emitter-Base Cutoff Current MMUN2211RL T1 I
CBO
CEO
EBO
(VEB = 6.0 V, IC = 0) MMUN2212RLT1 - - 0.2
MMUN2213RLT1 - - 0.1
MMUN2214RLT1 - - 0.2
MMUN2215RLT1 - - 0.9
MMUN2216RLT1 - - 1.9
MMUN2230RLT1 - - 4.3
MMUN2231RLT1 - - 2.3
MMUN2232RLT1 - - 1.5
MMUN2233RLT1 - - 0.18
MMUN2234RLT1 - - 0.13
Collector-Base Breakdown Voltage (IC=10mA, IE=0) V
Collector-Emitter Breakdown Voltage
ON CHARACTERISTICS
(3)
(IC=2.0mA, IB=0) V
(3)
DC Current Gain MMUN2211RLT1 h
(BR)CBO
(BR)CEO
FE
(VCE = 10 V, IC = 5.0 mA) MMUN2212RLT1 60 100 -
MMUN2213RLT1 80 140 -
MMUN2214RLT1 80 140 -
MMUN2215RLT1 160 350 -
MMUN2216RLT1 160 350 -
MMUN2230RLT1 3.0 5.0 -
MMUN2231RLT1 8.0 15 -
MMUN2232RLT1 15 30 -
MMUN2233RLT1 80 200 -
MMUN2234RLT1 80 150 Collector-Emitter Saturation Voltage (IC=10mA, IE=0.3mA) V
CE(sat)
(IC = 10 mA, IB = 5 mA) MMUN2230RLT1 MMUN2231RLT1
(IC = 10 mA, IB = 1 mA) MMUN2215RLT1 MMUN2216RLT1
MMUN2232RLT1 MMUN2233RLT1 MMUN2234RLT1
Output Voltage (on) V
OL
(VCC=5.0V,VB=2.5V, RL=1.0kΩ) MMUN2211RLT1 - - 0.2
MMUN2212RLT1 - - 0.2
MMUN2214RLT1 - - 0.2
MMUN2215RLT1 - - 0.2
MMUN2216RLT1 - - 0.2
MMUN2230RLT1 - - 0.2
MMUN2231RLT1 - - 0.2
MMUN2232RLT1 - - 0.2
MMUN2233RLT1 - - 0.2
MMUN2234RLT1 - - 0.2
(VCC =5.0V,VB=3.5V, RL= 1.0kΩ) MMUN2213RLT1 - - 0.2
Output Voltage(off)(VCC=5.0V,VB=0.5V, RL=1.0kΩ)V
OH
(VCC=5.0V,VB=0.050V, RL=1.0kΩ) MMUN2230RLT1
(VCC=5.0V,VB=0.25V, RL=1.0kΩ) MMUN2215RLT1
MMUN2216RLT1
MMUN2233RLT1
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
- - 10 0 nAdc
- - 500 nAdc
- - 0.5 mAdc
50 - - Vdc
50 - - Vdc
35 60 -
- - 0.25 Vdc
4.9 - - Vdc
Vdc
Q2–2/8
LESHAN RADIO COMPANY, LTD.
MMUN2211RLT1 SERIES
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
Input Resistor MMUN2211RLT1 R1 7. 0 10 13 k Ω
Resistor Ratio MMUN221 1RLT1 MMUN2212RL T1 MMUN2213RL T1 R1/R2 0.8 1.0 1.2
MMUN2214RL T1 0.17 0.21 0.25
MMUN2215RLT1 MMUN2216RL T1 — — —
MMUN2230RLT1 MMUN2231RL T1 MMUN2232RL T1 0.8 1.0 1.2
MMUN2233RL T1 0.055 0.1 0.185
MMUN2234RL T1 0.38 0.47 0.56
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
(3)
= 25°C unless otherwise noted) (Continued)
A
MMUN2212RL T1 15.4 22 28.6
MMUN2213RL T1 32.9 47 61.1
MMUN2214RL T1 7.0 10 13
MMUN2215RL T1 7.0 10 13
MMUN2216RL T1 3.3 4.7 6.1
MMUN2230RL T1 0.7 1.0 1.3
MMUN2231RL T1 1.5 2.2 2.9
MMUN2232RL T1 3.3 4.7 6.1
MMUN2233RL T1 3.3 4.7 6.1
MMUN2234RL T1 15.4 22 28.6
Q2–3/8
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