High –Speed Switching Diode
LESHAN RADIO COMPANY, LTD.
MMDL914T1
1
CATHODE
2
ANODE
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Surge Current I
FM(surge)
R
F
100 Vdc
200 mAdc
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR-5 Board,* P
D
T A = 25°C
Derate above 25°C 1.57 mW/°C
Thermal Resistance Junction to Ambient R
Junction and Storage Temperature T J , T
**FR-4 Minimum Pad
θJA
stg
200 mW
635 °C/W
150 °C
1
2
CASE 477– 02, STYLE 1
SOD– 323
DEVICE MARKING
MMDL914T1 = 5D
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I R = 100 µAdc)
Reverse Voltage Leakage Current I
(V R = 20Vdc) — 25 nAdc
(V R = 75Vdc) — 5.0 µAdc
Diode Voltage
(V R =0, f =1.0MHz )
Forward Voltage
(I F = 10 mAdc)
Reverse Recovery Time
(I F = I R = 10 mAdc ) (Figure 1)
V
C
V
t
100 — Vdc
(BR)
R
— 4.0 pF
T
— 1.0 Vdc
F
— 4.0 ns
rr
S5–1/3
LESHAN RADIO COMPANY, LTD.
MMDL914T1
+10 V
50 Ω OUTPUT
GENERAT OR
100
10
820 Ω
PULSE
2.0 k
t
100 µH
0.1 µF
t
INPUT SIGNAL
V
R
r
10%
90%
I
F
0.1µF
D U T
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
t
p
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. t p » t
rr
is equal to 10mA.
R(peak)
Figure 1. Recovery Time Equivalent Test Circuit
10
T A = 85°C
T A = –40°C
1.0
I
F
t
rr
I
R
T
A
T
A
OUTPUT PULSE
(I F = I R = 10 mA; MEASURED
at i
= 150°C
= 125°C
R(REC)
i
= 1.0 mA
R(REC)
= 1.0 mA)
t
T
= 25°C
A
1.0
, FORWARD CURRENT (mA)
F
I
0.1
0.2 0.4 0.6 0.8 1.0 1.2
V F , FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
0.68
0.64
0.60
0.56
, DIODE CAPACIT ANCE (pF)
D
C
0.52
0 0.2 0.4 0.6 0.8
T
= 85°C
T
T
A
= 55°C
A
= 25°C
A
0.1
0.01
, REVERSE CURRENT (µA)
R
I
0.001
01020304050
V R , REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
V R , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
S5–2/3