Schottky Barrier Diode
Schottky barrier diodes are designed primarily for high–efficiency
UHF and VHF detector applications. Readily available to many other fast
switching RF and digital applications.
• Extremely Low Minority Carrier Lifetime
• Very Low Capacitance — 1.0 pF @ 20 V
• Low Reverse Leakage — 200 nA (max)
• High Reverse Voltage — 70 Volts (min)
• Available in 8 mm Tape and Reel
• Device Marking: 5H
LESHAN RADIO COMPANY, LTD.
MMDL770T1
1.0 pF SCHOTTKY
BARRIER DIODE
1
1
CATHODE
2
ANODE
MAXIMUM RATINGS
Symbol Rating Value Unit
V
R
Reverse Voltage 70 Vdc
THERMAL CHARACTERISTICS
Symbol Characteristic M ax Unit
P
D
Total Device Dissipation FR–5 Board,* 200 mW
T A = 25°C
Derate above 25°C 1.57 mW/°C
R
T J , T
θJA
Thermal Resistance Junction to Ambient 635 °C/W
stg
Junction and Storage
Temperature Range
–55 to+150 °C
*FR–5 Minimum Pad
ORDERING INFORMATION
Device Package Shipping
MMDL770T1 SOD–323 3000 / Tape & Reel
2
PLASTIC SOD– 323
CASE 477
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Typ M ax Unit
Reverse Breakdown Voltage
(I R = 10 µA)
Diode Capacitance
(V R = 20 Volts, f = 1.0 MHz)
Reverse Leakage
(V R = 35 V)
Forward Voltage
(I F = 1.0 mAdc) V
(I F = 10 mA)
V
(BR)R
C
T
I
R
F
70 — — Volts
— 0.5 1.0 pF
— 9.0 200 nAdc
— 0.7 1.0 Vdc
S4–1/3
LESHAN RADIO COMPANY, LTD.
TYPICAL CHARACTERISTICS
MMDL770T1
2.0
MMBD770T1
1.6
1.2
0.8
0.4
, TOT AL CAPACIT ANCE (pF)
T
C
0
0 5.0 10 15 20 25 30 35 40 45 50
f = 1.0 MHz
V R , REVERSE VOLTAGE (VOLTS)
Figure 1. Total Capacitance
10
MMBD770T1
T
= 100°C
T
A
= 75°C
A
1.0
0.1
500
MMBD770T1
400
KRAKAUER METHOD
300
200
100
τ, MINORITY CARRIER LIFETIME (ps)
0
0 102030405060708090100
I F , FORWARD CURRENT (mA)
Figure 2. Minority Carrier Lifetime
100
MMBD770T1
10
T A = 85°C
T A = –40°C
0.01
, REVERSE LEAKAGE (µA)
R
I
0.001
T A = 25°C
01020304050
V R , REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Leakage
1.0
T
A
, FORWARD CURRENT (mA)
F
I
0.1
0.2 0.4 0.8 1.2 1.6 2.0
V F , FORWARD VOLTAGE (VOLTS)
Figure 4. Forward Voltage
= 25°C
S4–2/3