LRC MMDL301T1 Datasheet
Silicon Hot–Carrier Diodes
Schottky Barrier Diode
These devices are designed primarily for high–efficiency UHF and VHF
detector applications. They are readily adaptable to many other fast switching
RF and digital applications. They are supplied in an inexpensive plastic package
for low–cost, high–volume consumer and industrial/commercial requirements.
They are available in a Surface Mount package.
• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
• Very Low Capacitance – 1.5 pF (Max) @ V R = 15 V
• Low Reverse Leakage – I R = 13 nAdc (Typ)
• Device Marking: 4T
1
CATHODE
2
ANODE
LESHAN RADIO COMPANY, LTD.
MMDL301T1
30 VOLTS SILICON
HOT–CARRIER DETECTOR
AND SWITCHING DIODES
1
2
PLASTIC SOD– 323
CASE 477
MAXIMUM RATINGS ( T J =125°C unless otherwise noted )
Symbol Rating Value Unit
V
R
Reverse Voltage 30 Volts
THERMAL CHARACTERISTICS
Symbol Characteristic M ax Unit
P
D
Total Device Dissipation FR–5 Board,* 200 mW
T A = 25°C
Derate above 25°C 1.57 mW/°C
R
T J , T
θJA
Thermal Resistance Junction to Ambient 635 °C/W
stg
Junction and Storage
Temperature Range
–55 to+150 °C
*FR–5 Minimum Pad
ORDERING INFORMATION
Device Package Shipping
MMDL301T1 SOD–323 3000 / Tape & Reel
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(I R = 10 µA)
Diode Capacitance
(V R = 15 V, f = 1.0MHz) Figure 1
Reverse Leakage
(V R = 25 V) Figure 3
Forward Voltage
(I F = 1.0 mAdc) Figure 4
Forward Voltage
(I F = 10 mAdc) Figure 4
= 25°C unless otherwise noted)
A
V
(BR)R
C
T
I
R
V
F
V
F
30 — — Volts
— 0.9 1.5
— 13 200
— 0.38 0.45
— 0.52 0.6
pF
nAdc
Vdc
Vdc
S2–1/3
LESHAN RADIO COMPANY, LTD.
TYPICAL ELECTRICAL CHARACTERISTICS
MMDL301T1
2.8
f = 1.0 MHz
2.4
2.0
1.6
1.2
0.8
, TOT AL CAPACIT ANCE (pF)
0.4
T
C
0
0 3.0 6.0 9.0 12 15 18 21 24 27 30
V R , REVERSE VOLTAGE (VOL TS)
Figure 1. Total Capacitance
10
1.0
0.1
T A = 100°C
75°C
500
400
KRAKAUER METHOD
300
200
100
τ, MINORITY CARRIER LIFETIME (ps)
0
0 102030405060708090100
I F , FORWARD CURRENT (mA)
Figure 2. Minority Carrier Lifetime
100
10
= 85°C
T
A
T A = –40°C
0.01
, REVERSE LEAKAGE (µA)
R
I
0.001
0 6.0 12 18 24 30
25°C
V R , REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Leakage
I
F(PEAK)
SINUSOIDAL
GENERAT OR
BALLAST
NETWORK
(PADS)
Figure 5. Krakauer Method of Measuring Lifetime
CAPACITIVE
CONDUCTION
I
R(PEAK)
FORWARD
CONDUCTION
DUT
1.0
= 25°C
T
A
, FORWARD CURRENT (mA)
F
I
0.1
0.2 0.4 0.6 0.8 1.0 1.2
V F , FORWARD VOLTAGE (VOLTS)
Figure 4. Forward Voltage
STORAGE
CONDUCTION
SAMPLING
PADS
OSCILLOSCOPE
(50 Ω INPUT)
S2–2/3
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