LRC MMDL101T1 Datasheet
LESHAN RADIO COMPANY, LTD.
Schottky Barrier Diode
Schottky barrier diodes are designed primarily for high–efficiency
UHF and VHF detector applications. Readily available to many
other fast switching RF and digital applications.
• Very Low Capacitance — Less than 1.0 pF @ Zero Volts
• Low Noise Figure — 6.0 dB Typ @ 1.0 GHz
MMDL101T1
1.0 pF SCHOTTKY
BARRIER DIODE
• Device Marking: 4M
1
CATHODE
MAXIMUM RATINGS
Symbol Rating Value Unit
V
R
THERMAL CHARACTERISTICS
Symbol Characteristic M ax Unit
P
D
R
θJA
T J , T
stg
*FR–5 Minimum Pad
Total Device Dissipation FR–5 Board,* 200 mW
Thermal Resistance Junction to Ambient 635 °C/W
Junction and Storage
2
ANODE
Reverse Voltage 7.0 Vdc
T A = 25°C
Derate above 25°C 1.57 mW/°C
Temperature Range
–55 to+150 °C
1
2
PLASTIC SOD– 323
CASE 477
ORDERING INFORMATION
Device Package Shipping
MMDL101T1 SOD–323 3000 / Tape & Reel
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(I R = 10 µA)
Diode Capacitance
(V R = 0, f = 1.0MHz, Note 1)
Reverse Leakage
(V R = 3.0 V)
Noise Figure
(f = 1.0 GHz, Note 2)
Forward Voltage
(I F = 10 mA)
*Notes on Next Page
V
(BR)R
C
T
I
R
N F
V
F
7.0 10 — Volts
— 0.88 1.0
— 20 250
— 6.0 —
— 0.5 0.6
pF
nAdc
dB
Vdc
S1–1/3
LESHAN RADIO COMPANY, LTD.
TYPICAL CHARACTERISTICS
MMDL101T1
1.0
0.7
0.5
0.2
0.1
0.07
0.05
, REVERSE LEAKAGE ( µA)
R
0.02
I
0.01
30 40 50 60 70 80 90 100 1 10 120 130
V R = 3.0 Vdc
T A , AMBIENT TEMPERATURE (°C)
Figure 1. Reverse Leakage
1.0
0.9
0.8
C, CAP ACIT ANCE (pF)
0.7
0.6
0 1.0 2.0 3.0 4.0
MMBD110T1
V R , REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
MMBD110T1
100
10
T A = 85°C
1.0
T A = 25°C
, FORWARD CURRENT (mA)
F
I
0.1
0.3 0.4 0.5 0.6 0.7 0.8
T
A
= –40°C
MMBD110T1
V F , FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
11
10
9
8
7
6
5
4
NF, NOISE FIGURE (dB)
3
2
1
0.1 0.2 0.5 1.0 2.0 5.0 10
LOCAL OSCILLATOR FREQUENCY = 1.0GHz
(Test Circuit Figure 5)
MMBD110T1
P
, LOCAL OSCILLAT OR POWER (mW)
LO
Figure 4. Noise Figure
LOCAL
OSCILLATOR
UHF
NOISE SOURCE
H.P. 349A
NOISE
FIGURE METER
H.P. 342A
DIODE IN
TUNED
MOUNT
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
Figure 5. Noise Figure Test Circuit
NOTES ON TESTING AND SPECIFICATIONS
Note1—C C andC T are measured using a capacitance
bridge(Boonton Electronics Model 75A or
equivalent).
Note2—Noise figure measured with diode under test in
tuned diode mount using UHF noise source and
local oscillator (LO) frequency of 1.0 GHz.The
LO power is adjusted for 1.0 mW. I F amplifier
NF = 1.5 dB, f = 30MHz, see Figure 5.
S1–2/3
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