LRC MMBD6100LT1 Datasheet

Monolithic Dual Switching Diode

LESHAN RADIO COMPANY, LTD.

ANODE

3
CATHODE

MAXIMUM RATINGS(EACH DIODE)

Rating Symbol Value Unit

Reverse Voltage V
Forward Current I
Peak Forward Surge Current I

R

F

FM(surge)

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR– 5 Board
T A = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
Total Device Dissipation P
Alumina Substrate,

(2)

T A = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage Temperature T J , T

(1)

P

D

θ JA

D

θ JA

stg

1

2

ANODE

70 Vdc
200 mAdc
500 mAdc

225 mW

556 °C/W
300 mW

417 °C/W

–55 to +150 °C

MMBD6100LT1

3

1

2

CASE 318–08, STYLE9

SOT– 23 (TO–236AB)

DEVICE MARKING

MMBD6100LT1 = 5BM

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)(EACH DIODE)

A

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage V
(I

= 100 µAdc)

(BR)

Reverse Voltage Leakage Current I

(BR)

R

(V R = 50 Vdc)
Forward Voltage V

F

(I F = 1.0 mAdc) 0.55 0.7
(I F = 100 mAdc) 0.85 1.1
Reverse Recovery Time
(I F = I R = 10 mAdc,I

R(REC)

=1.0mAdc) (Figure 1)

t

rr

Capacitance(VR=0V) C — 2.5 pF

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

70 — Vdc

— 0.1 µAdc

Vdc

— 4.0 ns

G23–1/2

LESHAN RADIO COMPANY, LTD.

MMBD6100LT1

+10 V

50 Ω OUTPUT
PULSE

820 Ω

2.0 k

100 µH

0.1 µF

I

F

DUT

GENERAT OR

Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA.

Notes: 2. Input pulse is adjusted so I
Notes: 3. t p » t

rr

Figure 1. Recovery Time Equivalent Test Circuit

CURVES APPLICABLE TO EACH CATHODE

100

T

= 85°C

A

10

1.0

, FORWARD CURRENT (mA)

F

I

0.1

0.2 0.4 0.6 0.8 1.0 1.2

T

A

T A= –40°C

= 25°C

0.1µF

50 Ω INPUT

SAMPLING

OSCILLOSCOPE

t

r

10%

INPUT SIGNAL

V

R

is equal to 10mA.

R(peak)

1.0

0.1

0.01

, REVERSE CURRENT ( µA)

R

I

0.001

I

t

90%

10

t

p

F

t

rr

I

R

OUTPUT PULSE

(I F = I R = 10 mA; MEASURED

at i

R(REC)

i

= 1.0 mA

R(REC)

= 1.0 mA)

t

T A =150°C

T

=125°C

A

T

=85°C

A

T

=55°C

A

T

=25°C

A

01020304050

V F , FORWARD VOLTAGE (VOLTS)

Figure 2. Forward Voltage

1.0

0.9

0.8

0.7

, DIODE CAPACITANCE (pF)

D

C

0.6
0 2.0 4.0 6.0 8.0

V R , REVERSE VOLTAGE (VOLTS)

Figure 3. Leakage Current

V R , REVERSE VOLTAGE (VOLTS)

Figure 4. Capacitance

G23–2/2