Switching Diode
LESHAN RADIO COMPANY, LTD.
MMBD6050LT1
3
CATHODE
1
ANODE
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Surge Current I
FM(surge)
R
F
70 Vdc
200 mAdc
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board
T A = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
Total Device Dissipation P
Alumina Substrate,
(2)
T A = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage Temperature T J , T
(1)
P
D
θ JA
D
θ JA
stg
225 mW
556 °C/W
300 mW
417 °C/W
–55 to +150 °C
3
1
2
CASE 318–08, STYLE8
SOT– 23 (TO–236AB)
DEVICE MARKING
MMBD6050L T1 = 5A
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage V
(I
= 100 µAdc)
(BR)
Reverse Voltage Leakage Current I
(BR)
R
(V R = 50 Vdc)
Forward Voltage V
F
(I F = 1.0 mAdc) 0.55 0.7
(I F = 100 mAdc) 0.85 1.1
Reverse Recovery Time
(I F = I R = 10 mAdc,I
R(REC)
=1.0mAdc) (Figure 1)
t
rr
Capacitance(V R= 0V) C — 2.5 pF
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
70 — Vdc
— 0.1 µAdc
Vdc
— 4.0 ns
G22–1/2
+10 V
820 Ω
2.0 k
100 µH
LESHAN RADIO COMPANY, LTD.
MMBD6050LT1
I
t
t
I
F
0.1µF
r
10%
t
p
F
t
rr
t
50 Ω OUTPUT
PULSE
GENERAT OR
0.1 µF
DUT
OSCILLOSCOPE
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. t p » t
rr
Figure 1. Recovery Time Equivalent Test Circuit
TYPICAL CHARACTERISTICS
100
T
= 85°C
A
10
1.0
, FORWARD CURRENT (mA)
F
I
0.1
0.2 0.4 0.6 0.8 1.0 1.2
T
A
T A= –40°C
= 25°C
50 Ω INPUT
SAMPLING
INPUT SIGNAL
V
R
is equal to 10mA.
R(peak)
1.0
0.1
0.01
, REVERSE CURRENT ( µA)
R
I
0.001
90%
I
R
10
01020304050
T
A
T
A
T
A
T
A
T
A
(I F = I R = 10 mA; MEASURED
=150°C
=125°C
=85°C
=55°C
=25°C
i
R(REC)
OUTPUT PULSE
at i
= 1.0 mA)
R(REC)
= 1.0 mA
V F , FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
0.68
0.64
0.60
0.56
, DIODE CAPACITANCE (pF)
D
C
0.52
0 2.0 4.0 6.0 8.0
V R , REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
V R , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
G22–2/2