LRC MMBD352WT1 Datasheet
Dual Schottky Barrier Diode
LESHAN RADIO COMPANY, LTD.
MMBD352WT1
These devices are designed primarily for UHF mixer applications but are
suitable also for use in detector and ultra–fast switching circuits.
• Very Low Capacitance — Less Than 1.0 pF @ Zero Volts
• Low Forward Voltage — 0.5 Volts (Typ) @ I
= 10 mA
F
1
CASE 419–02 , STYLE 9
SOT–323 / SC – 70
1
ANODE
MAXIMUM RA TINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
R
7.0 V
CC
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board
T
= 25°C
A
(1)
P
D
200 mW
Derate above 25° 1.6 mW/°C
Thermal Resistance, Junction to Ambient R
Total Device Dissipation P
Alumina Substrate
(2)
TA = 25°C
θJA
D
625 °C/W
300 mW
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage Temperature TJ, T
θJA
stg
417 °C/W
–55 to +150 °C
DEVICE MARKING
MMBD352WT1 = M5
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Forward Voltage V
(I
= 10 mAdc)
F
Reverse Voltage Leakage Current I
(V
= 3.0 V) — 0.25
R
(V
= 7.0 V) — 10
R
F
R
— 0.60 V
Capacitance C — 1.0 pF
(V
= 0 V, f = 1.0 MHz)
R
1. FR–5 = 1.0 × 0.75 × 0.062 in.
2. Alumina = 0.4
× 0.3 × 0.024 in. 99.5% alumina.
2
CATHODE
3
CATHODE/ANODE
µA
3
2
MMBD352WT1–1/2
LESHAN RADIO COMPANY, LTD.
TYPICAL CHARACTERISTICS
MMBD352WT1
100
10
1.0
, FORWARD CURRENT (mA)
F
I
0.1
TA = 85°C
TA = –40°C
TA = 25°C
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Forward Voltage
1.0
0.9
0.8
C, CAPACITANCE (pF)
0.7
0.7 0.80.3 0.4 0.5 0.6
0.6
0
1.0 2.0 3.0 4.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Capacitance
MMBD352WT1–2/2
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