LRC MMBD301LT1 User Manual
Silicon Hot–Carrier Diodes
Schottky Barrier Diodes
LESHAN RADIO COMPANY, LTD.
MMBD301LT1
These devices are designed primarily for high–efficiency UHF and VHF detector
applications.They are readily adaptable to many other fast switching RF and digital
applications.They are supplied in an inexpensive plastic package for low–cost,
high–volume consumer and industrial/commercial requirements.They are also
available in a Surface Mount package.
• EXtremely Low Minority Carrier Lifetime –15ps(Typ)
• very Low Capacitance –1.5pF(Max)@VR=15V
• CLow Reverse Leakage –IR=13 nAdc(Typ)MBD301,MMBD301
3
CATHODE
1
ANODE
MAXIMUM RATINGS(TJ=125°C unless otherwise noted)
MBD301 MMBD301LT1
Rating symbol val u e unit
Reverse Voltage V
Forward Power Dissipation P
@TA=25 °C 280 200 mW
Derate above 25 °C 2.8 2.0 mW/ °C
Operating Junction T
Temperature Range –55 to +125
Storage Temperature Range T
DEVICE MARKING
MMBD301LT1=4T
ELECTRICAL CHARACTERISTICS(TA=25 °C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage(IR=10µA) V
Total Capacitance(VR=15V,f=1.0MHz,)Figure1 C
Reverse Leakage(VR=25V)Figure3 I
Forward Voltage(IF=1.0mAdc)Figure4 V
Forward Voltage(IF=10mAdc)Figure4 V
R
F
J
stg
30 Volts
–55 to +150 °C
(BR)R
T
R
F
F
30 — — Volts
— 0.9 1.5 pF
— 13 200 nAdc
— 0.38 0.45 Vdc
— 0.52 0.6 Vd c
30 VOLTS
SILICON HOT–CARRIER
DETECTOR AND SWITCHING
DIODES
3
1
2
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
°C
NOTE:MMBD301LT1 is also available in bulk packaging.Use MMBD301L as the device title to order this device in bulk.
G16–1/2
LESHAN RADIO COMPANY, LTD.
MMBD301LT1
TYPICAL ELECTRICAL CHARACTERISTICS
2.8
2.4
2.0
1.6
1.2
0.8
, TOT AL CAPACIT ANCE (pF)
0.4
T
C
0
0 3.0 6.0 9.0 12 15 18 21 24 27 30
V R , REVERSE VOLTAGE (VOLTS)
Figure 1. Total Capacitance
10
= 100°C
T
1.0
0.1
0.01
, REVERSE LEAKAGE ( µA)
R
I
0.001
0 6.0 12 18 24 30
A
75°C
25°C
f =1.0MHz
500
400
KRAKAUER METHOD
300
200
100
0
τ , MINORITY CARRIER LIFETIME (ps)
0 102030 40506070 8090100
I F , FORWARD CURRENT (mA)
Figure 2. Minority Carrier Lifetime
100
10
= 85°C
T
A
1.0
, FORWARD CURRENT (mA)
F
0.1
I
0.2 0.4 0.6 0.8 1.0 1.2
= –40°C
T
A
T A = 25°C
V R , REVERSE VOLTAGE (VOL TS)
Figure 3. Reverse Leakage
I
F(PEAK)
SINUSOIDAL
GENERATOR
BALLAST
NETWORK
(PADS)
Figure 5. Krakauer Method of Measuring Lifetime
CAPACITIVE
CONDUCTION
I
R(PEAK)
FORWARD
CONDUCTION
DUT
V F , FORWARD VOLTAGE (VOLTS)
Figure 4. Forward Voltage
STORAGE
CONDUCTION
SAMPLING
PADS
OSCILLOSCOPE
(50 Ω INPUT)
G16–2/2
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