LRC MMBD2836LT1, MMBD2835LT1 Datasheet

LESHAN RADIO COMPANY, LTD.

Monolithic Dual Switching Diodes

ANODE

3

CATHODE
1

2

CATHODE

MAXIMUM RATINGS

Rating Symbol Value Unit

Reverse Voltage MMBD2835LT1 V

R

35 Vdc
MMBD2836LT1 75
Forward Current I

F

100 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR– 5 Board
T A = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
Total Device Dissipation P
Alumina Substrate,

(2)

T A = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage Temperature T J , T

(1)

P

D

θ JA

D

θ JA

stg

225 mW

556 °C/W
300 mW

417 °C/W

–55 to +150 °C

MMBD2835LT1
MMBD2836LT1

3

1

2

CASE 318–08, STYLE 12

SOT– 23 (TO–236AB)

DEVICE MARKING

MMBD2835LT1 = A3X;MMBD2836LT1=A2X

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)( EACH DIODE )

A

Characteristic Symbol Min Ma x Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage(I
MMBD2836LT1 75 —
Reverse Voltage Leakage Current I
(V R = 30 Vdc) MMBD2835LT1 — 100
(V R = 50 Vdc) MMBD2836LT1 — 100
Diode Capacitance
(V R = 0, f = 1.0 MHz)
Forward Voltage(I F = 10 mAdc) V
(I F = 50 mAdc) — 1.0
(I F = 100 mAdc) — 1.2
Reverse Recovery Time

(I F = I R = 10 mAdc, I

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

= 100 µAdc) MMBD2835LT1 V

R

= 1.0mAdc) (Figure 1)

R(REC)

(BR)

R

C

T

F

t

rr

35 — Vdc

nAdc

— 4.0 pF
— 1.0 Vdc

— 4.0 ns

G20–1/2

+10 V

820 Ω

2.0 k

100 µH

LESHAN RADIO COMPANY, LTD.

MMBD2835LT1 MMBD2836LT1

I

t

t

I

F

0.1µF

r

10%

t

p

F

t

rr

t

0.1 µF

DUT

50 Ω OUTPUT
PULSE
GENERAT OR

OSCILLOSCOPE

Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA.

Notes: 2. Input pulse is adjusted so I
Notes: 3. t p » t

rr

Figure 1. Recovery Time Equivalent Test Circuit

CURVES APPLICABLE TO EACH CATHODE

100

T

= 85°C

A

10

1.0

, FORWARD CURRENT (mA)

F

I

0.1

0.2 0.4 0.6 0.8 1.0 1.2

T

A

T A= –40°C

= 25°C

50 Ω INPUT

SAMPLING

INPUT SIGNAL

V

R

is equal to 10mA.

R(peak)

1.0

0.1

0.01

, REVERSE CURRENT ( µA)

R

I

0.001

90%

I

R

10

01020304050

T

A

T

A

T

A

T

A

T

A

(I F = I R = 10 mA; MEASURED

=150°C

=125°C

=85°C

=55°C

=25°C

i

R(REC)

OUTPUT PULSE

at i

= 1.0 mA)

R(REC)

= 1.0 mA

V F , FORWARD VOLTAGE (VOLTS)

Figure 2. Forward Voltage

1.75

1.50

1.25

1.00

, DIODE CAPACITANCE (pF)

D

C

0.75
0 2.0 4.0 6.0 8.0

V R , REVERSE VOLTAGE (VOLTS)

Figure 3. Leakage Current

V R , REVERSE VOLTAGE (VOLTS)

Figure 4. Capacitance

G20–2/2