LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diodes
ANODE
3
CATHODE
1
2
CATHODE
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage MMBD2835LT1 V
R
35 Vdc
MMBD2836LT1 75
Forward Current I
F
100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board
T A = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
Total Device Dissipation P
Alumina Substrate,
(2)
T A = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage Temperature T J , T
(1)
P
D
θ JA
D
θ JA
stg
225 mW
556 °C/W
300 mW
417 °C/W
–55 to +150 °C
MMBD2835LT1
MMBD2836LT1
3
1
2
CASE 318–08, STYLE 12
SOT– 23 (TO–236AB)
DEVICE MARKING
MMBD2835LT1 = A3X;MMBD2836LT1=A2X
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)( EACH DIODE )
A
Characteristic Symbol Min Ma x Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage(I
MMBD2836LT1 75 —
Reverse Voltage Leakage Current I
(V R = 30 Vdc) MMBD2835LT1 — 100
(V R = 50 Vdc) MMBD2836LT1 — 100
Diode Capacitance
(V R = 0, f = 1.0 MHz)
Forward Voltage(I F = 10 mAdc) V
(I F = 50 mAdc) — 1.0
(I F = 100 mAdc) — 1.2
Reverse Recovery Time
(I F = I R = 10 mAdc, I
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
= 100 µAdc) MMBD2835LT1 V
R
= 1.0mAdc) (Figure 1)
R(REC)
(BR)
R
C
T
F
t
rr
35 — Vdc
nAdc
— 4.0 pF
— 1.0 Vdc
— 4.0 ns
G20–1/2
+10 V
820 Ω
2.0 k
100 µH
LESHAN RADIO COMPANY, LTD.
MMBD2835LT1 MMBD2836LT1
I
t
t
I
F
0.1µF
r
10%
t
p
F
t
rr
t
0.1 µF
DUT
50 Ω OUTPUT
PULSE
GENERAT OR
OSCILLOSCOPE
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. t p » t
rr
Figure 1. Recovery Time Equivalent Test Circuit
CURVES APPLICABLE TO EACH CATHODE
100
T
= 85°C
A
10
1.0
, FORWARD CURRENT (mA)
F
I
0.1
0.2 0.4 0.6 0.8 1.0 1.2
T
A
T A= –40°C
= 25°C
50 Ω INPUT
SAMPLING
INPUT SIGNAL
V
R
is equal to 10mA.
R(peak)
1.0
0.1
0.01
, REVERSE CURRENT ( µA)
R
I
0.001
90%
I
R
10
01020304050
T
A
T
A
T
A
T
A
T
A
(I F = I R = 10 mA; MEASURED
=150°C
=125°C
=85°C
=55°C
=25°C
i
R(REC)
OUTPUT PULSE
at i
= 1.0 mA)
R(REC)
= 1.0 mA
V F , FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
1.75
1.50
1.25
1.00
, DIODE CAPACITANCE (pF)
D
C
0.75
0 2.0 4.0 6.0 8.0
V R , REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
V R , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
G20–2/2