LRC MMBD101LT1 Datasheet

Schottky Barrier Diodes

LESHAN RADIO COMPANY, LTD.

Designed primarily for UHF mixer applications but suitable also for use in detector and ultra-fast switching circuits.Supplied in an inexpensive plastic package for low-cost,high-volume consumer requirements.Also available in Surface Mount package.

• Low Noise Figure—6.0dB Typ@1.0GHz

• Very Low Capacitance—Less Than 1.0pF@zero Volts

• High Forward Conductance—0.5volts(typ)@I

CA THODE

=10mA

ANODE

MAXIMUM RA TINGS

MBD101 MMBD101LT1

Rating symbol value unit

Reverse Voltage v Forward Power Dissipation p

@TA=25 °C 280 225 mW Derate above 25 °C 2.2 1.8 mW/ °C Junction Temperature T Storage Temperature Range T

stg

DEVICE MARKING

MMBD101LT1=4M

ELECTRICAL CHARACTERISTICS(TA=25 °C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Reverse Breakdown Voltage V

(IR= 10µAdc)

Diode Capacitance C

(VR= 0,f =1.0MHz,Note1)

Forward Voltage(1) V

(I F= 10mAdc)

Reverse Leakage I

(VR= 3.0Vdc)

7.0 Volts

+150 °C

–55 to +150 °C

(BR)R

7.0 10 — Volts

— 0.88 1.0 pF

— 0.5 0.6 Volts

— 0.02 0.25 µAdc

MMBD101L T1

SILICON SCHOTTKY

BARRIER DIODES

CASE 318–08, STYLE 6

SOT– 23 (TO–236AB)

NOTE: MMBD101LT1 is also available in bulk packaging.Use MMBD101L as the device title to order this device in bulk.

G15–1/2

LESHAN RADIO COMPANY, LTD.

TYPICAL CHARACTERISTICS

(T A = 25°C unless noted)

MMBD101LT1

1.0

0.7

0.5

0.2

0.1

0.07

0.05

0.02

, REVERSE LEAKAGE ( µA)

0.01 30 40 50 60 70 80 90 100 110 120 130

V R= 3.0Vdc

T A , AMBIENT TEMPERATURE (°C)

Figure 1. Reverse Leakage

1.0

0.9

0.8

0.7

C, CAPACIT ANCE (pF)

0.6 0 1.0 2.0 3.0 4.0

100

= 85°C

= –40°C

, FORWARD CURRENT (mA)

0.1

0.3 0.4 0.5 0.6 0.7

T A = 25°C

V F , FORWARD VOLTAGE (VOLTS)

Figure 2. Forward Voltage

9.0

8.0

7.0

6.0

5.0

4.0

3.0

NF, NOISE FIGURE (dB)

2.0

1.0

0.1 0.2 0.5 1.0 2.0 5.0 10

LOCAL OSCILLATOR FREQUENCY = 1.0 GHz

(TEST CIRCUIT IN FIGURE 5)

V R , REVERSE VOLTAGE (VOLTS)

Figure 3. Capacitance

LOCAL

OSCILLAT OR

UHF

NOISE SOURCE

H.P. 349A

NOISE

FIGURE METER

H.P. 342A

DIODE IN

TUNED

MOUNT

IF AMPLIFIER

NF = 1.5 dB

f = 30 MHz

Figure 5. Noise Figure Test Circuit

, LOCAL OSCILLAT OR POWER (mW)

Figure 4. Noise Figure

NOTES ON TESTING AND SPECIFICATIONS

Note 1 — C C and C T are measured using a capacitance bridge

(Boonton Electronics Model 75A or equivalent).

Note 2 — Noise figure measured with diode under test in tuned

diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5.

Note 3 — L

is measured on a package having a short instead

of a die, using an impedance bridge (Boonton Radio Model 250A RX Meter).

G15–2/2