LRC MDC5001T1 Datasheet
LESHAN RADIO COMPANY, LTD.
Low Voltage Bias Stabilizer with Enable
MDC5001T1
SMALLBLOCK
• Maintains Stable Bias Current in N–Type Discrete Bipolar Junction and
Field Effect Transistors
• Provides Stable Bias Using a Single Component Without Use of Emitter
Ballast and Bypass Components
• Operates Over a Wide Range of Supply Voltages Down to 1.8 Vdc
• Reduces Bias Current Variation Due to Temperature and Unit–to–Unit
Parametric Changes
• Consumes
<
0.5 mW at V
= 2.75 V
CC
• Active High Enable is CMOS Compatible
This device provides a reference voltage and acts as a DC feedback element around an external discrete, NPN BJT or N–Channel FET. It allows the
external transistor to have its emitter/source directly grounded and still operate with a stable collector/drain DC current. It is primarily intended to stabilize
the bias of discrete RF stages operating from a low voltage regulated supply,
but can also be used to stabilize the bias current of any linear stage in order to
eliminate emitter/source bypassing and achieve tighter bias regulation over
temperature and unit variations. The “ENABLE” polarity nulls internal current,
Enable current, and RF transistor current in “STANDBY.” This device is intended to replace a circuit of three to six discrete components.
The combination of low supply voltage, low quiescent current drain, and
small package make the MDC5001T1 ideal for portable communications applications such as:
• Cellular Telephones
• Pagers
• PCN/PCS Portables
• GPS Receivers
• PCMCIA RF Modems
• Cordless Phones
• Broadband and Multiband Transceivers and Other Portable Wireless
Products.
INTEGRATED CIRCUIT
1
CASE 419B–01 STYLE 19
INTERNAL CIRCUIT DIAGRAM
SILICON
2
6
3
SOT-363
TM
5
4
MDC5001T–1/10
LESHAN RADIO COMPANY, LTD.
MDC5001T1
MAXIMUM RA TINGS
Rating Symbol Value Unit
Power Supply Voltage V
Ambient Operating Temperature Range T
Storage Temperature Range T
Junction Temperature T
Collector Emitter Voltage (Q2) V
Enable Voltage (Pin 5) V
CC
A
stg
J
CEO
ENBL
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Power Dissipation P D mW
(FR–5 PCB of 1, × 0.75, × 0.062,, T
= 25°C) 150
A
Derate above 25°C 1.2 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Recommended Operating Supply Voltage V
Power Supply Current (V
, I
V
are unterminated
ref
out
= 2.75 V) I
CC
CC
CC
1.8 2.75 10 Volts
— 130 200 mA
See Figure 8
Q2 Collector Emitter Breakdown Voltage V
(I
= 10 µA, I
C2
Reference Voltage (V
(I
= 30 µA) 2.050 2.075 2.100
out
= 150 µA) 2.110 2.135 2.160
(I
out
B2
= 0)
ENBL
= V
= 2.75 V, V
CC
= 0.7 V) V ref Volts
out
(BR)CEO2
15 Volts
See Figure 1
Reference Voltage (V
–40°C
<
T A <
+85°C)
Pulse Width = 10 mS, Duty Cycle = 1% ∆V
V
CC
(I
= 10 µA) ±5.0 ±10
out
= 30 µA) ±15 ±30
(I
out
(I
= 100 µA) ±25 ±50
out
See Figures 2 and 11
ENBL
= V
= 2.75 V, V
CC
= 0.7 V,
out
ref
15 V
–40 to +85 °C
–65 to +150 °C
150 °C
–15 V
V
CC
833 °C/W
dc
V
mV
MDC5001T–2/10
LESHAN RADIO COMPANY, LTD.
MDC5001T1
The following SPICE models are provided as a convenience to the user and every effort has been ade
to insure their accuracy. However, no responsibility for their accuracy is assumed by ON Semiconductor.
.MODEL Q4 NPN
BF = 136
BR = 0.2
CJC = 318.6 f
CJE = 569.2 f
CJS = 1.9 p
EG = 1.215
FC = 0.5
IKF = 24.41 m
IKR = 0.25
IRB = 0.0004
IS = 256E–18
ISC = 1 f
ISE = 500E–18
ITF = 0.9018
MJC = 0.2161
MJE = 0.3373
MJS = 0.13
NC = 1.09
NE = 1.6
NF = 1.005
RB = 140
RBM = 70
RC = 180
RE = 1.6
TF = 553.6 p
TR = 10 n
VAF = 267.6
VAR = 12
VJC = 0.4172
VJE = 0.7245
VJS = 0.39
VTF = 10
XTB = 1.5
XTF = 2.077
XTI = 3
.MODEL Q1, Q2 PNP
BF = 87
BR = 0.6
CJC = 800E–15
CJE = 46E–15
EG = 1.215
FC = 0.5
IKF = 3.8E–04
IKR = 2.0
IRB = 0.9E–3
IS = 1.027E–15
ISC = 10E–18
ISE = 1.8E–15
ITF = 2E–3
MJC = 0.2161
MJE = 0.2161
NC = 0.8
NE = 1.38
NF = 1.015
NK = 0.5
NR = 1.0
RB = 720
RBM = 470
RC = 180
RE = 26
TF = 15E–9
TR = 50E–09
VAF = 54.93
VAR = 20
VAR = 20
VJC = 0.4172
VJE = 0.4172
VTF = 10
XTB = 1.5
XTF = 2.0
XTI = 3
RESISTOR VALUES
R 1 = 12 K
R
= 6 K
2
= 3.4 K
R
3
R
= 12 K
4
= 20 K
R
5
R
= 40 K
6
These models can be retrieved
electronically by accessing the ON
Semiconductor Web page at
http://design–net.sps.mot.com/models
and searching the section on
SMALLBLOCKE models
MDC5001T–3/10
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