LRC MC74VHC1GU04DTT3, MC74VHC1GU04DFT2, MC74VHC1GU04DFT4, MC74VHC1GU04DTT1, MC74VHC1GU04DFT1 Datasheet
LESHAN RADIO COMPANY, LTD.
Unbuffered Inverter
MC74VHC1GU04
The MC74VHC1GU04 is an advanced high speed CMOS Unbuffered inverter fabricated with silicon gate CMOS technology. It
achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
This device consists of a single unbuffered inverter. In combination with others, or in the MC74VHCU04 Hex Unbuffered Inverter,
these devices are well suited for use as oscillators, pulse shapers, and in many other applications requiring a high–input impedance
amplifier. For digital applications, the MC74VHC1G04 or the MC74VHC04 are recommended.
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output.
The MC74VHC1GU04 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This
allows the MC74VHC1GU04 to be used to interface 5 V circuits to 3 V circuits.
• High Speed: t
• Low Power Dissipation: I
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 105; Equivalent Gates = 26
= 2.5 ns (Typ) at V
PD
= 2 mA (Max) at T A = 25°C
CC
5
= 5 V
CC
MARKING DIAGRAMS
4
1
2
3
SC–70/SC–88A/SOT–353
DF SUFFIX
CASE 419A
5
4
1
2
SOT–23/TSOP–5/SC–59
3
DT SUFFIX
CASE 483
PIN ASSIGNMENT
1NC
2 IN A
3 GND
4 OUT Y
5V
d
V6
Pin 1
d = Date Code
Figure 1. Pinout (Top View)
d
V6
Figure 2. Logic Symbol
Pin 1
d = Date Code
FUNCTION T ABLE
Inputs Output
AY
LH
HL
CC
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 4 of this data sheet.
VHU4–1/4
LESHAN RADIO COMPANY, LTD.
MC74VHC1GU04
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
θ
JA
T
L
T
J
T stg Storage temperature –65 to +150 °C
V
ESD
I
LATCH–UP
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability . Functional operation under absolute–maximum–rated conditions is
not implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22–A114–A
3. Tested to EIA/JESD22–A115–A
4. Tested to JESD22–C101–A
5. Tested to EIA/JESD78
DC Supply Voltage – 0.5 to + 7.0 V
DC Input V oltage – 0.5 to +7.0 V
DC Output Voltage V CC=0 – 0.5 to +7.0 V
High or Low State –0.5 to V cc + 0.5
Input Diode Current –20 mA
Output Diode Current V
< GND; V
OUT
OUT
> V
CC
+20 mA
DC Output Current, per Pin + 25 mA
DC Supply Current, V
and GND +50 mA
CC
Power dissipation in still air SC–88A, TSOP–5 200 mW
Thermal resistance SC–88A, TSOP–5 333 °C/W
Lead Temperature, 1 mm from Case for 10 s 260 °C
Junction T emperature Under Bias + 150 °C
ESD Withstand Voltage Human Body Model (Note 2) >2000 V
Machine Model (Note 3) > 200
Charged Device Model (Note 4) N/A
Latch–Up Performance Above V
and Below GND at 125°C (Note 5) ± 500 mA
CC
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
V
V
T
t r ,t
CC
IN
OUT
A
f
DC Supply Voltage 2.0 5.5 V
DC Input Voltage 0.0 5.5 V
DC Output Voltage 0.0 V
CC
Operating T emperature Range – 55 + 125 °C
Input Rise and Fall Time V
= 3.3 ± 0.3 V 0 No Limit ns/V
CC
V
= 5.0 ± 0.5 V 0 No Limit
CC
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction Time, Time,
Temperature °C Hours Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
1
120 37,000 4.2
130 17,800 2.0
NORMALIZED FAILURE RATE
1 1 0 100 1000
140 8,900 1.0
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
V
VHU4–2/4
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