LRC MC74VHC1GT86DFT2, MC74VHC1GT86DFT4, MC74VHC1GT86DTT1, MC74VHC1GT86DTT3, MC74VHC1GT86DFT1 Datasheet
LESHAN RADIO COMPANY, LTD.
2-Input Exclusive OR Gate / CMOS Logic Level Shifter
with LSTTL–Compatible Inputs
MC74VHC1GT86
The MC74VHC1GT86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology.
It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output.
The device input is compatible with TTL–type input thresholds and the output has a full 5 V CMOS level output swing. The input
protection circuitry on this device allows overvoltage tolerance on the input, allowing the device to be used as a logic–level translator from
3.0 V CMOS logic to 5.0V CMOS Logic or from 1.8 V CMOS logic to 3.0 V CMOS Logic while operating at the high–voltage power supply.
The MC74VHC1GT86 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This
allows the MC74VHC1GT86 to be used to interface 5 V circuits to 3 V circuits. The output structures also provide protection when
V
= 0 V . These input and output structures help prevent device destruction caused by supply voltage – input/output voltage mismatch,
CC
battery backup, hot insertion, etc.
• High Speed: t
• Low Power Dissipation: I
• TTL–Compatible Inputs: V
• CMOS–Compatible Outputs: V
V
< 0.1 V
OL
= 4.8 ns (Typ) at V
PD
CC
@Load
CC
5
= 5 V
CC
= 2 mA (Max) at T A = 25°C
= 0.8 V; V
IL
OH
4
IH
> 0.8 V
= 2.0 V
;
CC
• Power Down Protection Provided on Inputs and Outputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 83; Equivalent Gates = 16
MARKING DIAGRAMS
1
2
3
SC–70/SC–88A/SOT–353
DF SUFFIX
CASE 419A
5
4
1
2
3
SOT–23/TSOP–5/SC–59
DT SUFFIX
CASE 483
PIN ASSIGNMENT
1 IN B
2 IN A
3 GND
4 OUT Y
5V
d
VM
Pin 1
d = Date Code
Figure 1. Pinout (Top View)
d
VM
Figure 2. Logic Symbol
Pin 1
d = Date Code
FUNCTION T ABLE
Inputs Output
AB Y
LL L
LH H
HL H
CC
HH L
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 4 of this data sheet.
VHT86–1/4
LESHAN RADIO COMPANY, LTD.
MC74VHC1GT86
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
θ
JA
T
L
T
J
T stg Storage temperature –65 to +150 °C
V
ESD
I
LATCH–UP
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
eyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not
implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Derating – SC–88A Package: –3 mW/°C from 65°C to 125°C
– TSOP5 Package: –6 mW/°C from 65°C to 125°C
3. Tested to EIA/JESD22–A114–A
4. Tested to EIA/JESD22–A115–A
5. Tested to JESD22–C101–A
6. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
V
IN
V
OUT
T
A
t r ,t
f
DC Supply Voltage – 0.5 to + 7.0 V
DC Input V oltage – 0.5 to +7.0 V
DC Output Voltage V CC=0 – 0.5 to +7.0 V
High or Low State –0.5 to V cc + 0.5
Input Diode Current –20 mA
Output Diode Current V
< GND; V
OUT
OUT
> V
CC
+20 mA
DC Output Current, per Pin + 25 mA
DC Supply Current, V
and GND +50 mA
CC
Power dissipation in still air SC–88A, TSOP–5 200 mW
Thermal resistance SC–88A, TSOP–5 333 °C/W
Lead Temperature, 1 mm from Case for 10 s 260 °C
Junction T emperature Under Bias + 150 °C
ESD Withstand Voltage Human Body Model (Note 2) >2000 V
Machine Model (Note 3) > 200
Charged Device Model (Note 4) N/A
Latch–Up Performance Above V
and Below GND at 125°C (Note 5) ± 500 mA
CC
DC Supply Voltage 3.0 5.5 V
DC Input Voltage 0.0 5.5 V
DC Output Voltage 0.0 V
CC
V
Operating T emperature Range – 55 + 125 °C
Input Rise and Fall Time V
= 3.3 ± 0.3 V 0 100 ns/V
CC
V
= 5.0 ± 0.5 V 0 20
CC
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction Time, Time,
Temperature °C Hours Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
1
NORMALIZED FAILURE RATE
1 1 0 100 1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
VHT86–2/4
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