LRC MC74VHC1GT66DTT3, MC74VHC1GT66DFT1, MC74VHC1GT66DFT2, MC74VHC1GT66DFT4, MC74VHC1GT66DTT1 Datasheet
LESHAN RADIO COMPANY, LTD.
ANALOG Switch
MC74VHC1GT66
The MC74VHC1GT66 is an advanced high speed CMOS bilateral analog switch fabricated with silicon gate CMOS technology. It
achieves high speed propagation delays and low ON resistances while maintaining low power dissipation. This bilateral switch controls
analog and digital voltages that may vary across the full power–supply range (from VCC to GND).
The MC74VHC1GT66 is compatible in function to a single gate of the very High Speed CMOS MC74VHCT4066. The device has
been designed so that the ON resistances (RON) are much lower and more linear over input voltage.
The ON/OFF Control input is compatible with TTL–type input thresholds allowing the device to be used as a logic–level translator from
3.0 V CMOS logic to 5.0 V CMOS logic or from 1.8 V CMOS logic to 3.0 V CMOS logic while operating at the high–voltage power supply.
The input protection circuitry on this device allows overvoltage tolerance on the input, which provides protection when voltages of up to 7
V are applied, regardless of the supply voltage. This allows the MC74VHC1GT66 to be used to interface 5 V circuits to 3 V circuits.
• High Speed: t
• Low Power Dissipation: I
• Diode Protection Provided on Inputs and Outputs
• Improved Linearity and Lower ON Resistance over Input Voltage
• On/Off Control Input Has OVT
= 20 ns (Typ) at V
PD
= 2 µA (Max) at T A = 25°C
CC
CC
= 5 V
MARKING DIAGRAMS
5
1
2
3
4
SC–70/SC–88A/SOT–353
DF SUFFIX
CASE 419A
5
4
1
2
3
SOT–23/TSOP–5/SC–59
DT SUFFIX
CASE 483
PIN ASSIGNMENT
1 IN/OUT X
2 OUT/IN Y
3 GND
4 ON/OFF CONTROL
5V
CC
d
VE
Pin 1
d = Date Code
Figure 1. Pinout (Top View)
d
VE
Figure 2. Logic Symbol
Pin 1
d = Date Code
FUNCTION T ABLE
A
A
On / Off Control Input State Analog Switch
LOff
HOn
ORDERING INFORMA TION
See detailed ordering and shipping information in the
package dimensions section on page 6 of this data sheet.
VHT66–1/6
LESHAN RADIO COMPANY, LTD.
MC74VHC1GT66
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
V
IN
V
IS
I
IK
I
CC
P
D
T
L
T stg Storage temperature –65 to +150 °C
V
ESD
I
LATCH–UP
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
eyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not
implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Derating – SC–88A Package: –3 mW/°C from 65°C to 125°C
– TSOP5 Package: –6 mW/°C from 65°C to 125°C
3. Tested to EIA/JESD22–A114–A
4. Tested to EIA/JESD22–A115–A
5. Tested to JESD22–C101–A
6. Tested to EIA/JESD78
DC Supply Voltage – 0.5 to + 7.0 V
DC Input V oltage – 0.5 to +7.0 V
Analog Output Voltage –0.5 to +7.0 V
Input Diode Current –20 mA
DC Supply Current, V
and GND +25 mA
CC
Power dissipation in still air SC–88A (Note 2.) 200 mW
TSOP5 (Note 2.) 45 0
Lead Temperature, 1 mm from Case for 10 s 260 °C
ESD Withstand Voltage Human Body Model (Note 3) >2000 V
Machine Model (Note 4) > 200
Charged Device Model (Note 5) N/A
Latch–Up Performance Above V
and Below GND at 125°C (Note 6) ± 500 mA
CC
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
V
IN
V
IS
T
A
t r ,t
The θ
f
of the package is equal to 1/Derating. Higher junction temperatures may affect the expected lifetime of the device per the
JA
DC Supply Voltage 2.0 5.5 V
DC Input Voltage GND 5.5 V
Analog Input Voltage GND V
CC
Operating T emperature Range – 55 + 125 °C
Input Rise and Fall Time V
= 3.3 ± 0.3 V 0 100 ns/V
CC
V
= 5.0 ± 0.5 V 0 20
CC
table and figure below.
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction Time, Time,
Temperature °C Hours Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
1
120 37,000 4.2
130 17,800 2.0
NORMALIZED FAILURE RATE
1 1 0 100 1000
140 8,900 1.0
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
V
VHT66–2/6
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