The MC74VHC1GT14 is a single gate CMOS Schmitt–trigger inverter fabricated with silicon gate CMOS technology. It achieves high
speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output.
The device input is compatible with TTL–type input thresholds and the output has a full 5 V CMOS level output swing. The input
protection circuitry on this device allows overvoltage tolerance on the input, allowing the device to be used as a logic–level translator from
3.0 V CMOS logic to 5.0 V CMOS Logic or from 1.8 V CMOS logic to 3.0 V CMOS Logic while operating at the high–voltage power
supply.
The MC74VHC1GT14 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This
allows the MC74VHC1GT14 to be used to interface 5 V circuits to 3 V circuits. The output structures also provide protection when
V
= 0 V . These input and output structures help prevent device destruction caused by supply voltage – input/output voltage mismatch,
CC
battery backup, hot insertion, etc. The MC74VHC1GT14 can be used to enhance noise immunity or to square up slowly changing waveforms.
• High Speed: t
• Low Power Dissipation: I
• TTL–Compatible Inputs: V
= 4.5 ns (Typ) at V
PD
= 2 mA (Max) at T A = 25°C
CC
= 0.8 V; V
IL
• CMOS–Compatible Outputs: V
V
< 0.1 V
OL
@ Load
CC
> 0.8 V
OH
CC
= 5 V
= 2.0 V
IH
CC
;
• Power Down Protection Provided on Inputs and Outputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic
Families
See detailed ordering and shipping information in the
package dimensions section on page 4 of this data sheet.
VHT14–1/4
LESHAN RADIO COMPANY, LTD.
MC74VHC1GT14
MAXIMUM RATINGS
Symbol ParameterValueUnit
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
θ
JA
T
L
T
J
T stgStorage temperature–65 to +150°C
V
ESD
I
LATCH–UP
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability . Functional operation under absolute–maximum–rated conditions is
not implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22–A114–A
3. Tested to EIA/JESD22–A115–A
4. Tested to JESD22–C101–A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol ParameterMinMaxUnit
V
CC
V
IN
V
OUT
T
A
t r ,t
f
DC Supply Voltage– 0.5 to + 7.0V
DC Input V oltage– 0.5 to +7.0V
DC Output VoltageV CC=0– 0.5 to +7.0V
High or Low State–0.5 to V cc + 0.5
Input Diode Current–20mA
Output Diode CurrentV
< GND; V
OUT
OUT
> V
CC
+20mA
DC Output Current, per Pin+ 25mA
DC Supply Current, V
and GND+50mA
CC
Power dissipation in still airSC–88A, TSOP–5200mW
Thermal resistanceSC–88A, TSOP–5333°C/W
Lead Temperature, 1 mm from Case for 10 s260°C
Junction T emperature Under Bias+ 150°C
ESD Withstand VoltageHuman Body Model (Note 2)>2000V
Machine Model (Note 3)> 200
Charged Device Model (Note 4)N/A
Latch–Up Performance Above V
and Below GND at 125°C (Note 5)± 500mA
CC
DC Supply Voltage3.05.5V
DC Input Voltage0.05.5V
DC Output VoltageV
High Low State0.0V
= 00.05.5V
CC
CC
Operating T emperature Range– 55+ 125°C
Input Rise and Fall TimeV