LRC MC74VHC1G32DFT1, MC74VHC1G32DFT4, MC74VHC1G32DTT1, MC74VHC1G32DTT3 Datasheet
LESHAN RADIO COMPANY, LTD.
2-Input OR Gate
MC74VHC1G32
The MC74VHC1G32 is an advanced high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology . It achieves
high speed operation similar to equivalent Bipolar Shortly TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output.
The MC74VHC1G32 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This
allows the MC74VHC1G32 to be used to interface 5 V circuits to 3 V circuits.
• High Speed: t
• Low Power Dissipation: I
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 60; Equivalent Gates = 15
= 3.7 ns (Typ) at V
PD
= 2 mA (Max) at T A = 25°C
CC
5
= 5 V
CC
MARKING DIAGRAMS
4
1
2
3
SC–70/SC–88A/SOT–353
DF SUFFIX
CASE 419A
5
4
1
2
SOT–23/TSOP–5/SC–59
3
DT SUFFIX
CASE 483
PIN ASSIGNMENT
1 IN B
2 IN A
3 GND
4 OUT Y
5V
d
V4
Pin 1
d = Date Code
Figure 1. Pinout (Top View)
d
V4
Figure 2. Logic Symbol
Pin 1
d = Date Code
FUNCTION T ABLE
Inputs Output
AB Y
LL L
LH H
HL H
CC
HH H
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 4 of this data sheet.
VH32–1/4
LESHAN RADIO COMPANY, LTD.
MC74VHC1G32
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
θ
JA
T
L
T
J
T stg Storage temperature –65 to +150 °C
V
ESD
I
LATCH–UP
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability . Functional operation under absolute–maximum–rated conditions is
not implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22–A114–A
3. Tested to EIA/JESD22–A115–A
4. Tested to JESD22–C101–A
5. Tested to EIA/JESD78
DC Supply Voltage – 0.5 to + 7.0 V
DC Input Voltage – 0.5 to 7.0 V
DC Output Voltage V CC=0 – 0.5 to 7.0 V
High or Low State –0.5 to V cc + 0.5
Input Diode Current –20 mA
Output Diode Current V
< GND; V
OUT
OUT
> V
CC
+20 mA
DC Output Current, per Pin + 25 mA
DC Supply Current, V
and GND +50 mA
CC
Power dissipation in still air SC–88A, TSOP–5 200 mW
Thermal resistance SC–88A, TSOP–5 333 °C/W
Lead Temperature, 1 mm from Case for 10 s 260 °C
Junction T emperature Under Bias + 150 °C
ESD Withstand Voltage Human Body Model (Note 2) >2000 V
Machine Model (Note 3) > 200
Charged Device Model (Note 4) N/A
Latch–Up Performance Above V
and Below GND at 125°C (Note 5) ± 500 mA
CC
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
V
V
T
t r ,t
CC
IN
OUT
A
f
DC Supply Voltage 2.0 5.5 V
DC Input Voltage 0.0 5.5 V
DC Output Voltage 0.0 V
CC
Operating T emperature Range – 55 + 125 °C
Input Rise and Fall Time V
= 3.3 ± 0.3 V 0 100 ns/V
CC
V
= 5.0 ± 0.5 V 0 20
CC
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction Time, Time,
Temperature °C Hours Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
1
120 37,000 4.2
130 17,800 2.0
NORMALIZED FAILURE RATE
1 1 0 100 1000
140 8,900 1.0
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
V
VH32–2/4
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